Title:
TUNEABLE LASER WITH IMPROVED SUPPRESSION OF AUGER RECOMBINATION
Document Type and Number:
WIPO Patent Application WO2003034553
Kind Code:
A3
Abstract:
A junction region for the laser diode may be improved to give an increased wavelength tuning range with improved thermal stability. The region has a homojunction structure that modifies the band structure to approximate that found in a type II superlattice. Up to half of the InGaAsP layer that nearest the p-InP region is n-type doped leaving the remainder with the original doping profile. This creates separate potential wells for electrons and holes in different parts of the InGaAsP layer. Also the barrier for electrons, but not for the holes, on the (p-InP)-(I-InGaAsP)-heterojunction may be increased by inserting a blocking layer of InAlAs, which is lattice matched to InP and InGaAsP, on the p-side between the above two materials.
Inventors:
ZAKHLENIUK NICK (GB)
CARTER ANDREW (GB)
HOLDEN ANTHONY (GB)
ROBBINS DAVID (GB)
CARTER ANDREW (GB)
HOLDEN ANTHONY (GB)
ROBBINS DAVID (GB)
Application Number:
PCT/GB2002/004595
Publication Date:
September 04, 2003
Filing Date:
October 10, 2002
Export Citation:
Assignee:
BOOKHAM TECHNOLOGY (GB)
ZAKHLENIUK NICK (GB)
CARTER ANDREW (GB)
HOLDEN ANTHONY (GB)
ROBBINS DAVID (GB)
ZAKHLENIUK NICK (GB)
CARTER ANDREW (GB)
HOLDEN ANTHONY (GB)
ROBBINS DAVID (GB)
International Classes:
H01S5/0625; (IPC1-7): H01S5/34; H01S5/062
Foreign References:
| EP0549853A1 | 1993-07-07 | |||
| EP0433542A2 | 1991-06-26 | |||
| EP0543587A1 | 1993-05-26 |
Other References:
NEBER S ET AL: "TUNABLE LASER DIODES WITH TYPE II SUPERLATTICE IN THE TUNING REGION", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, INSTITUTE OF PHYSICS. LONDON, GB, vol. 13, no. 7, 1 July 1998 (1998-07-01), pages 801 - 805, XP000765528, ISSN: 0268-1242
KÖHLER ET AL.: "Type II superlattices electronically tunable laser diodes", WALTER SCHOTTKY INSTITUTE, RESEARCH - ANNUAL REPORT 1999, pages 78 - 79, XP001147607
SCHUBERT E F ET AL: "TUNABLE STIMULATED EMISSION OF RADIATION IN GAAS DOPING SUPERLATTICES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 55, no. 8, 21 August 1989 (1989-08-21), pages 757 - 759, XP000080996, ISSN: 0003-6951
KÖHLER ET AL.: "Type II superlattices electronically tunable laser diodes", WALTER SCHOTTKY INSTITUTE, RESEARCH - ANNUAL REPORT 1999, pages 78 - 79, XP001147607
SCHUBERT E F ET AL: "TUNABLE STIMULATED EMISSION OF RADIATION IN GAAS DOPING SUPERLATTICES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 55, no. 8, 21 August 1989 (1989-08-21), pages 757 - 759, XP000080996, ISSN: 0003-6951
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