TUNGSTEN BASED SINTERED COMPACT AND METHOD FOR PRODUCTION THEREOF

WIPO Patent Application WO/2005/073418

A1

A tungsten-based sintered compact produced by the above method has a relative density of 99.5 % or more (has a pore volume of 0.5 % or less) and has a structure being uniform and having isotropy; a method for producing the tungsten-based sintered compact, which comprises subjecting a tungsten-based powder to the CIP treatment under a pressure of 350 MPa or more, sintering the resultant product in a hydrogen atmosphere under a condition of a sintering temperature of 1600°C or higher and a holding time of 5 hours or more, and subjecting the resultant product to the HIP treatment in an argon gas under a condition of 150 MPa or more and 1900°C or higher; and an electrode for a discharge lamp, a sputtering target, a crucible, a member for shielding an irradiation, an electrode for resistance welding, and the like using the above sintered compact. The above tungsten-based sintered compact can be suitably used for an electrode for a discharge lamp, a sputtering target, a crucible, a member for shielding an irradiation, an electrode for discharge machining, a substrate for mounting a semiconductor element, a structural member and the like.

SHIBUYA TAKUJI (JP)
TERAMOTO SHUICHI (JP)
MATSUO SHIGERU (JP)
SAKAGUCHI SHIGEYA (JP)

PCT/JP2005/001274

August 11, 2005

January 28, 2005

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NIPPON TUNGSTEN (JP)
SHIBUYA TAKUJI (JP)
TERAMOTO SHUICHI (JP)
MATSUO SHIGERU (JP)
SAKAGUCHI SHIGEYA (JP)

B22F3/15; C22C27/04; H01J61/067; H01J61/073; (IPC1-7): C22C27/04; B22F3/15

JP2003055758A	2003-02-26
JP2002305308A	2002-10-18
JP3121400B2	2000-12-25
JP2002371301A	2002-12-26
JP2001295036A	2001-10-26

Kohori, Susumu (1-1 Hakataekimae 1-chome, Hakata-k, Fukuoka-shi Fukuoka 11, JP)

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