Title:
TUNGSTEN OXIDE SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2020/189428
Kind Code:
A1
Abstract:
This tungsten oxide sputtering target is characterized in that a peak of W18O49 is identified by X-ray diffraction analysis on a sputter surface and a cross section perpendicular to the sputter surface, wherein IS(103)/IS(010), which is the ratio of diffraction intensity IS(103) of (103) plane to diffraction intensity IS(010) of (010) plane for W18O49 on the sputter surface, is 0.38 or less, IC(103)/IC(010), which is the ratio of diffraction intensity IC(103) of (103) plane to diffraction intensity IC(010) of (010) plane for W18O49 on the cross section is at least 0.55, and the area ratio of W18O49 phase on a surface parallel to the sputter surface is at least 37%.
Inventors:
YAMAGUCHI GO (JP)
IO KENSUKE (JP)
KAWAMURA SHIORI (JP)
UMEMOTO KEITA (JP)
IO KENSUKE (JP)
KAWAMURA SHIORI (JP)
UMEMOTO KEITA (JP)
Application Number:
PCT/JP2020/010423
Publication Date:
September 24, 2020
Filing Date:
March 11, 2020
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C04B35/495; C04B35/645; H01L21/285
Foreign References:
| JP2013076163A | 2013-04-25 | |||
| JPH03150357A | 1991-06-26 | |||
| JP2011195442A | 2011-10-06 | |||
| JP2019048659A | 2019-03-28 | |||
| JP2020039006A | 2020-03-12 | |||
| JPH1167459A | 1999-03-09 | |||
| JPH10259054A | 1998-09-29 | |||
| JP2013076163A | 2013-04-25 |
Other References:
See also references of EP 3940109A4
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
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