TUNGSTEN SILICIDE TARGET MEMBER AND METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING TUNGSTEN SILICIDE FILM

Title:

TUNGSTEN SILICIDE TARGET MEMBER AND METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING TUNGSTEN SILICIDE FILM

Document Type and Number:

WIPO Patent Application WO/2019/187329

Kind Code:

A1

Abstract:

Provided is a tungsten silicide target member for efficiently suppressing generation of particles during sputtering film formation. A tungsten silicide target member having a two-phase structure of a WSi2 phase and a Si phase, wherein the compositional formula thereof in terms of atomic ratio is WSix (where X > 2.0), the ratio (I1/S1) of the total area I1 of Si grains in which the area per Si particle is 63.6 µm2 or greater with respect to the total area S1 of Si grains constituting the Si phase when a sputtering surface is observed is 5% or less, and the Weibull modulus of the flexural strength is 2.1 or greater.

More Like This:

JPH01212754	METHOD FOR METALLIZING SUBSTRATE OF SILICA, QUARTZ, GLASS OR SAPPHIRE
JP2022104518	SPUTTERING TARGET-BACKING PLATE BONDED BODY, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR COLLECTING SPUTTERING TARGET
JPH01296445	PRODUCTION OF RECORDING MEDIUM AND TARGET FOR SPUTTERING USED FOR SAID METHOD

Inventors:

DASAI TAKAFUMI (JP)
ASANO TAKAYUKI (JP)
OKABE TAKEO (JP)

Application Number:

PCT/JP2018/043048

Publication Date:

October 03, 2019

Filing Date:

November 21, 2018

Export Citation:

Click for automatic bibliography generation Help

Assignee:

JX NIPPON MINING & METALS CORP (JP)

International Classes:

C23C14/34; B22F1/05

Domestic Patent References:

WO2017158928A1	2017-09-21
WO2018173450A1	2018-09-27

Foreign References:

JPH0616412A	1994-01-25
JPH0820863A	1996-01-23
JPH06322529A	1994-11-22
JPH0849068A	1996-02-20
JP2005239532A	2005-09-08
JPH11200024A	1999-07-27

Other References: