Title:
TUNNEL FIELD-EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2018/110202
Kind Code:
A1
Abstract:
A tunnel field-effect transistor 10A has a laminate structure made of a second active region 50, a first active region 30, and a control electrode 20. The first active region 30 is composed of a first-A active region 31, and a first-B active region 32 positioned at least between the first-A active region 31 and a first active region extending section 41. The second active region 50 is present below the first-A active region 31, and the second active region 50 is not present below the first-B active region 32. When L2-Total is the total extension length of an edge of a portion of the second active region 50 where a regular projection image of the second active region 50 overlaps a regular projection image of the first active region 30, and L1-Y is the length of the first active region along the Y direction when the axial direction of the first active region 30 is the X direction and the laminate direction of the laminate structure is the Z direction, then L1-Y
< L2-Total is satisfied.
Inventors:
MATSUMOTO KOICHI (JP)
Application Number:
PCT/JP2017/041446
Publication Date:
June 21, 2018
Filing Date:
November 17, 2017
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L29/66; H01L21/336; H01L29/78
Domestic Patent References:
| WO2005117127A1 | 2005-12-08 |
Foreign References:
| JP2015119178A | 2015-06-25 | |||
| JP2013080906A | 2013-05-02 | |||
| JPH0778962A | 1995-03-20 | |||
| JPH08181309A | 1996-07-12 | |||
| JPH07176763A | 1995-07-14 |
Attorney, Agent or Firm:
YAMAMOTO Takahisa et al. (JP)
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