Title:
TUNNEL JUNCTION FOR MULTI-JUNCTION LED, MULTI-JUNCTION LED, AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/163924
Kind Code:
A1
Abstract:
Disclosed are a tunnel junction for a multi-junction LED, a multi-junction LED, and a preparation method therefor. The tunnel junction comprises: heavily doped P-type AlX1Ga1-X1As, a AlX2Ga1-X2As first graded layer, heavily doped N-type GaYIn1-YP, and a AlX3Ga1-X3As second graded layer. The heavily doped N-type GaYIn1-YP can effectively reduce long-wavelength infrared light absorption, improve the brightness of devices, and effectively reduce series resistance and voltages. In addition, the AlX2Ga1-X2As first graded layer and the AlX3Ga1-X3As second graded layer can be added to effectively improve the quality of an interface and crystal growth, achieve effective switching between As and P, and reduce series resistance and operating voltage, thereby improving the efficiency of photoelectric conversion.
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Inventors:
HSIAO CHIHHUNG (CN)
PENG YU-REN (CN)
CAI KUNHUANG (CN)
WANG DUXIANG (CN)
CHANG CHIA-HUNG (CN)
PENG YU-REN (CN)
CAI KUNHUANG (CN)
WANG DUXIANG (CN)
CHANG CHIA-HUNG (CN)
Application Number:
PCT/CN2020/075867
Publication Date:
August 26, 2021
Filing Date:
February 19, 2020
Export Citation:
Assignee:
TIANJIN SANAN OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L33/00; H01L33/06
Foreign References:
| CN108933186A | 2018-12-04 | |||
| CN201466053U | 2010-05-12 | |||
| CN106067493A | 2016-11-02 | |||
| CN1490888A | 2004-04-21 | |||
| CN105633226A | 2016-06-01 | |||
| US20040051113A1 | 2004-03-18 | |||
| US20090067460A1 | 2009-03-12 |
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