Title:
TUNNEL MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY EMPLOYING SAME
Document Type and Number:
WIPO Patent Application WO/2011/096312
Kind Code:
A1
Abstract:
Disclosed are a tunnel magnetoresistance effect element, and a nonvolatile magnetic memory cell and magnetic random access memory employing same, which are capable of minimizing write current without affecting the information heat stability index (E/kT). In the tunnel magnetoresistance effect element, a ferromagnetic resonance layer (607) is disposed upon a ferromagnetic recording layer (605) with a non-magnetic layer (606) interposed therebetween, the ferromagnetic resonance layer (607) having a ferromagnetic resonance frequency within ±10% of the ferromagnetic resonance frequency of the ferromagnetic recording layer (605). The tunnel magnetoresistance effect element is applied to the magnetic memory cell and the magnetic random access memory.
Inventors:
YAMANOUCHI Michihiko (HITACHI LTD., 2520, Akanuma, Hatoyama-machi, Hiki-gu, Saitama 95, 〒3500395, JP)
山ノ内 路彦 (〒95 埼玉県比企郡鳩山町赤沼２５２０番地 株式会社日立製作所 基礎研究所内 Saitama, 〒3500395, JP)
山ノ内 路彦 (〒95 埼玉県比企郡鳩山町赤沼２５２０番地 株式会社日立製作所 基礎研究所内 Saitama, 〒3500395, JP)
Application Number:
JP2011/051480
Publication Date:
August 11, 2011
Filing Date:
January 26, 2011
Export Citation:
Assignee:
HITACHI, LTD. (6-6 Marunouchi 1-chome, Chiyoda-ku Tokyo, 80, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
YAMANOUCHI Michihiko (HITACHI LTD., 2520, Akanuma, Hatoyama-machi, Hiki-gu, Saitama 95, 〒3500395, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
YAMANOUCHI Michihiko (HITACHI LTD., 2520, Akanuma, Hatoyama-machi, Hiki-gu, Saitama 95, 〒3500395, JP)
International Classes:
H01L21/8246; G11C11/15; H01L27/105; H01L29/82; H01L43/08
Attorney, Agent or Firm:
POLAIRE I.P.C. (7-1 Hatchobori 2-chome, Chuo-ku Tokyo, 32, 〒1040032, JP)
Claims: