Title:
TUNNEL MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND BUILT-IN MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/077662
Kind Code:
A1
Abstract:
A TMR element that comprises: a base layer that is provided upon an upper surface of a via wiring part; a magnetic tunnel junction part that is provided upon the surface of the base layer; and an interlayer insulating layer that covers a side surface of the via wiring part and the base layer. The base layer has a stress relief part. The magnetic tunnel junction part has: a reference layer that has a fixed magnetization direction; a free magnetization layer; and a tunnel barrier layer that is provided between the reference layer and the free magnetization layer. The interlayer insulating layer includes an insulating material.
Inventors:
SASAKI TOMOYUKI (JP)
TANAKA YOSHITOMO (JP)
TANAKA YOSHITOMO (JP)
Application Number:
PCT/JP2017/037418
Publication Date:
April 25, 2019
Filing Date:
October 16, 2017
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L21/8239; H01L27/105; H01L43/08
Domestic Patent References:
| WO2013069091A1 | 2013-05-16 |
Foreign References:
| JP2013069865A | 2013-04-18 | |||
| US20150243583A1 | 2015-08-27 | |||
| JP2013016587A | 2013-01-24 | |||
| JP2010232499A | 2010-10-14 | |||
| JP2016086057A | 2016-05-19 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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