Title:
TUNNEL MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURING METHOD AND SPUTTERING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2015/121905
Kind Code:
A1
Abstract:
To reduce variance of characteristics, such as an electric resistance value, in a substrate surface, in the cases of forming a film on a substrate by means of a sputtering method using an insulating material target. This tunnel magnetoresistive effect element manufacturing method implements: a first film-forming step for forming a film by sputtering a first insulating material target when a projection surface of the first insulating material target is in a first state, said projection surface being a part of a plane including a front surface of the substrate; and a second film-forming step for forming a film by sputtering a second insulating material target when the projection surface of the second insulating material target is in a second state that is different from the first state, said projection surface being the part of the plane including the front surface of the substrate. The second film-forming step is implemented such that an insulating film exhibiting a second characteristic change having inverse characteristics with respect to a first characteristic change is obtained at least in a substrate part from a center portion to a peripheral portion of the substrate, said first characteristic change being generated from the substrate center portion to the substrate peripheral portion of the film obtained in the first film-forming step.
Inventors:
OTANI YUICHI (JP)
SEINO TAKUYA (JP)
SEINO TAKUYA (JP)
Application Number:
PCT/JP2014/005729
Publication Date:
August 20, 2015
Filing Date:
November 14, 2014
Export Citation:
Assignee:
CANON ANELVA CORP (JP)
International Classes:
H01L43/12; C23C14/08; C23C14/34; G11B5/39; H01F10/32; H01F41/18; H01L21/8246; H01L27/105; H01L43/08
Domestic Patent References:
| WO2011122411A1 | 2011-10-06 | |||
| WO2009154009A1 | 2009-12-23 |
Attorney, Agent or Firm:
OKABE, Yuzuru et al. (JP)
Okabe 讓 (JP)
Okabe 讓 (JP)
Download PDF: