Title:
TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME
Document Type and Number:
WIPO Patent Application WO/2013/069091
Kind Code:
A1
Abstract:
Provided is a tunnel magnetoresistive effect element which can be stably operated by achieving high TMR ratio and low write current and by increasing the thermal stability indexes (E/kBT) of a recording layer and a fixed layer, while suppressing resistance increase in the element as a whole.
Conductive oxide layers (31, 32) are arranged on a surface of a recording layer (21) and/or a fixed layer (22), each of which is formed of CoFeB, said surface being on the reverse side of the tunnel barrier layer (10)-side surface.
Inventors:
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
YAMAMOTO HIROYUKI (JP)
KUROSAKI YOSUKE (JP)
MIURA KATSUYA (JP)
IKEDA SHOJI (JP)
YAMAMOTO HIROYUKI (JP)
KUROSAKI YOSUKE (JP)
MIURA KATSUYA (JP)
Application Number:
PCT/JP2011/075698
Publication Date:
May 16, 2013
Filing Date:
November 08, 2011
Export Citation:
Assignee:
UNIV TOHOKU (JP)
HITACHI LTD (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
YAMAMOTO HIROYUKI (JP)
KUROSAKI YOSUKE (JP)
MIURA KATSUYA (JP)
HITACHI LTD (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
YAMAMOTO HIROYUKI (JP)
KUROSAKI YOSUKE (JP)
MIURA KATSUYA (JP)
International Classes:
H01L21/8246; H01L27/105; H01L43/08; H01L43/10
Foreign References:
| JP2009094104A | 2009-04-30 |
Other References:
S.IKEDA ET AL.: "A perpendicular-anisotropy CoFeB- MgO magnetic tunnel junction", NATURE MATERIALS, vol. 9, 11 July 2010 (2010-07-11), pages 721 - 724
Attorney, Agent or Firm:
HIRAKI YUSUKE (JP)
Yusuke Hiraki (JP)
Yusuke Hiraki (JP)
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Claims:
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