TUNNELING FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2018/152836

A1

A tunneling field effect transistor and a manufacturing method therefor, the method comprising: forming a dummy gate structure on a first surface of a substrate (1); forming a first side wall (6) on the side wall of the dummy gate structure; forming a first groove (7) in a first region of the substrate located on the first side of the dummy gate structure; forming a second side wall (8) on the side wall of the first side wall, the second side wall also extending to cover a second region of the substrate which is located on the second side of the dummy gate structure and a part of the surface of the first groove, and forming a first exposed region in the first groove; depositing a first doped subregion (9) in the first exposed region; removing from the second side wall the part located on the side facing the first region of the dummy gate structure, depositing a second exposed region in the first groove, and forming a second doped subregion (11) in the second exposed region; forming a second doped region (14) in a second region of the substrate; and removing the dummy gate structure and forming a gate structure on the first surface of the substrate, the gate structure at least partially overlapping the second doped subregion and not overlapping the second doped region.

ZHAO JING (CN)
TSAI HAOCHENG (CN)
ZHANG CHEN-XIONG (CN)

PCT/CN2017/075006

August 30, 2018

February 27, 2017

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HUAWEI TECH CO LTD (CN)

H01L21/336; H01L29/06; H01L29/78

CN103560153A	2014-02-05
CN103560144A	2014-02-05
CN103117306A	2013-05-22
US20110073909A1	2011-03-31
CN102142461A	2011-08-03
CN104779292A	2015-07-15

SHENPAT INTELLECTUAL PROPERTY AGENCY (CN)

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