Title:
TUNNELING FIELD EFFECT TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/000392
Kind Code:
A1
Abstract:
Provided are a tunneling field effect transistor and a preparation method therefor. The tunneling field effect transistor comprises: a substrate layer (1); a rectangular semiconductor strip (2) formed on an upper surface of the substrate layer, the rectangular semiconductor strip being provided with a first source region (201), a first channel region (204), a drain region (203), a second channel region (205), and a second source region (202), which are in turn arranged along a first direction; a first gate dielectric layer (301) and a second gate dielectric layer (302) covering outer surfaces of a first portion (2011) of the first source region and of a third portion (2021) of the second source region; a first gate region (401) covering an outer surface of the first gate dielectric layer, a direction of an electric field applied to the first gate region pointing to the first source region; and a second gate region (402) covering an outer surface of the second gate dielectric layer, a direction of an electric field applied to the second gate region pointing to the second source region. A dual source region design is applied to increase a tunneling area of carriers in the source region, and the direction of the electric field applied to the gate region coincides with the tunneling direction of carriers in the source region, which increases the tunneling probability, and the tunneling current is proportional to the tunneling area and the tunneling probability, so the tunneling current is larger.
Inventors:
ZHAO JING (CN)
ZHANG CHENXIONG (CN)
ZHANG CHENXIONG (CN)
Application Number:
PCT/CN2016/088035
Publication Date:
January 04, 2018
Filing Date:
June 30, 2016
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/78
Foreign References:
| CN1855495A | 2006-11-01 | |||
| KR101286704B1 | 2013-07-16 | |||
| CN1407624A | 2003-04-02 |
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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