TUNNELING GAP DIODES - BOREALIS TECH LTD

Title:

TUNNELING GAP DIODES

Document Type and Number:

WIPO Patent Application WO2005031780

Kind Code:

A3

Abstract:

The present invention discloses a tunneling diode having a band gap material as the collector. This increases the tunneling of electrons having greater energy than the Fermi level from emitter to collector, leading to an increase in the efficiency of heat pumping or power generation by the diode. This approach also reduces back tunneling of electrons from collector to emitter.

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Inventors:

MARTSINOVSKY ARTEMI (RU)
COX ISAIAH W (GB)

Application Number:

PCT/US2004/031221

Publication Date:

September 22, 2005

Filing Date:

September 22, 2004

Export Citation:

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Assignee:

BOREALIS TECH LTD (US)
MARTSINOVSKY ARTEMI (RU)
COX ISAIAH W (GB)

International Classes:

F25B21/00; H01L21/20; H01L21/332; H01L21/8222; H01L37/00; H01J; (IPC1-7): H01L21/332; H01L21/20; H01L21/8222

Foreign References:

US5162243A

1992-11-10

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