Title:
TWO-DIMENSIONAL SEMICONDUCTOR, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2018/004046
Kind Code:
A1
Abstract:
Disclosed are a two-dimensional semiconductor in which an energy band gap changes with thickness, a manufacturing method therefor, and a semiconductor device comprising the same. A two-dimensional semiconductor according to an embodiment comprises: a first layer having a first thickness; and a second layer having a second thickness, wherein the first thickness and the second thickness are different from each other, the first layer forms a first junction with a first electrode, and the second layer forms a second junction with a second electrode.
Inventors:
CHUNG HYUN JONG (KR)
KIM HYUN CHEOL (KR)
LEE HAN BYEOL (KR)
KIM HAK SEONG (KR)
CHOI SUNG YOOL (KR)
KIM HYUN CHEOL (KR)
LEE HAN BYEOL (KR)
KIM HAK SEONG (KR)
CHOI SUNG YOOL (KR)
Application Number:
PCT/KR2016/007171
Publication Date:
January 04, 2018
Filing Date:
July 04, 2016
Export Citation:
Assignee:
UNIV KONKUK IND COOP CORP (KR)
International Classes:
H01L29/06; H01L21/04; H01L21/285; H01L29/47
Foreign References:
| KR20150051823A | 2015-05-13 | |||
| KR20150008770A | 2015-01-23 | |||
| US20140197459A1 | 2014-07-17 | |||
| US20120007045A1 | 2012-01-12 | |||
| KR101436849B1 | 2014-09-02 |
Other References:
HYUN-JONG CHUNG, KIM, HYUN-CHEOL ET AL.: "Engineering Optical and Electronic Properties of WS 2 by Varying the Number of Layers", ACS NANO, vol. 9, no. 7, 25 January 2015 (2015-01-25), pages 6854 - 6860, XP055600990
Attorney, Agent or Firm:
MUHANN PATENT & LAW FIRM (KR)
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