Title:
TWO-DIMENSIONAL SEMICONDUCTOR, P-TYPE DOPING METHOD THEREFOR, AND TWO-DIMENSIONAL SEMICONDUCTOR DEVICE COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2020/055013
Kind Code:
A1
Abstract:
A two-dimensional semiconductor according to the present invention comprises a two-dimensional transition metal chalcogenide film having a first region and a second region adjacent to the first region, wherein the first region has a first conductivity type, the second region has a second conductivity type different from the first conductivity type, and the first region is doped with oxygen atoms.
Inventors:
JO MOON-HO (KR)
SEO SEUNG-YOUNG (KR)
HEO HOSEOK (KR)
SUNG JIHO (KR)
SEO SEUNG-YOUNG (KR)
HEO HOSEOK (KR)
SUNG JIHO (KR)
Application Number:
PCT/KR2019/011160
Publication Date:
March 19, 2020
Filing Date:
August 30, 2019
Export Citation:
Assignee:
INST BASIC SCIENCE (KR)
POSTECH ACAD IND FOUND (KR)
POSTECH ACAD IND FOUND (KR)
International Classes:
H01L21/285; H01L21/02; H01L21/268; H01L21/28
Foreign References:
| KR20180001603A | 2018-01-05 | |||
| KR20150134816A | 2015-12-02 | |||
| KR20140037703A | 2014-03-27 |
Other References:
KIM, EUNPA ET AL.: "Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser - Assisted Reaction", ADVANCED MATERIALS, vol. 28, 2016, pages 341 - 346, XP055694396
WANG, SHUNFENG ET AL.: "Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors", PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, pages 1 - 12, XP055694399
WANG, SHUNFENG ET AL.: "Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors", PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, pages 1 - 12, XP055694399
Attorney, Agent or Firm:
KORYO IP & LAW (KR)
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