Title:
ULTRA HIGH PERFORMANCE INTERPOSER
Document Type and Number:
WIPO Patent Application WO/2015/021194
Kind Code:
A3
Abstract:
An interconnection component includes a semiconductor material layer having a first surface and a second surface opposite the first surface and spaced apart in a first direction. At least two metalized vias extend through the semiconductor material layer. A first pair of the at least two metalized vias are spaced apart from each other in a second direction orthogonal to the first direction. A first insulating via in the semiconductor layer extends from the first surface toward the second surface. The insulating via is positioned such that a geometric center of the insulating via is between two planes that are orthogonal to the second direction and that pass through each of the first pair of the at least two metalized vias. A dielectric material at least partially fills the first insulating via or at least partially encloses a void in the insulating via.
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Inventors:
UZOH CYPRIAN EMEKA (US)
SUN ZHUOWEN (US)
SUN ZHUOWEN (US)
Application Number:
PCT/US2014/049998
Publication Date:
April 09, 2015
Filing Date:
August 06, 2014
Export Citation:
Assignee:
INVENSAS CORP (US)
International Classes:
H01L21/48; H01L23/48; H01L23/14; H01L23/498
Domestic Patent References:
| WO2012145373A1 | 2012-10-26 | |||
| WO2011149561A1 | 2011-12-01 |
Foreign References:
| US20120315738A1 | 2012-12-13 | |||
| US20110132652A1 | 2011-06-09 | |||
| EP2337067A2 | 2011-06-22 | |||
| US8426233B1 | 2013-04-23 |
Attorney, Agent or Firm:
LATTIN, Christopher, W. (3025 Orchard ParkwaySan Jose, CA, US)
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