ULTRA-LOW POWER MAGNETOELECTRIC MAGNETIC FIELD SENSOR

Title:

ULTRA-LOW POWER MAGNETOELECTRIC MAGNETIC FIELD SENSOR

Document Type and Number:

WIPO Patent Application WO/2018/226284

Kind Code:

A3

Abstract:

A high-sensitivity and ultra-low power consumption magnetic sensor using a magnetoelectric (ME) composite comprising of magnetostrictive and piezoelectric layers. This sensor exploits the magnetically driven resonance shift of a free-standing magnetoelectric micro-beam resonator. Also disclosed is the related method for making an on-chip micro-resonator magnetic sensor.

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Inventors:

FINKEL PETER (US)
BENNETT STEVEN (US)
STARUCH MARGO (US)
BUSSMANN KONRAD (US)
BALDWIN JEFFREY (US)
MATIS BERNARD (US)
LACOMB RONALD (US)
ZAPPONE WILLIAM (US)
LACOMB JULIE (US)
METZLER MEREDITH (US)
GOTTRON NORMAN (US)

Application Number:

PCT/US2018/022145

Publication Date:

February 14, 2019

Filing Date:

March 13, 2018

Export Citation:

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Assignee:

US GOV SEC NAVY (US)
UNIV CARNEGIE MELLON (US)

International Classes:

G01R33/032; G01R33/00; G01R33/18

Domestic Patent References:

WO2004070408A1

2004-08-19

Foreign References:

US20160003924A1	2016-01-07
US20070252593A1	2007-11-01
US9383208B2	2016-07-05
JP2010145147A	2010-07-01

Other References: