Title:
ULTRASONIC LEVITATION IN A RAPID THERMAL PROCESSING PLANT FOR WAFERS
Document Type and Number:
WIPO Patent Application WO2004059695
Kind Code:
A3
Abstract:
The aim of the invention is to permit the rapid cooling of substrates in a rapid thermal processing plant. The invention thus provides a method for thermally treating discoid substrates, in particular semiconductor wafers, in a rapid thermal processing plant comprising at least one first radiation source, placed at a distance from the substrate, for heating at least one substrate. According to the invention, the substrate is heated in a heating phase and is cooled in a subsequent cooling phase and the substrate is held at a distance of between 50 mu m and 1 mm, in particular between 150 and 500 mu m from a heating/cooling plate at least for one period of the cooling phase. In order to eliminate problems caused by supporting elements, the invention discloses a device and a method for thermally treating discoid substrates, in particular semiconductor wafers, in a rapid thermal processing plant. In said device and method at least one substrate is heated in a heating phase by a radiation source that is placed at a distance from said substrate and is cooled in a subsequent cooling phase and the substrate is held by ultrasonic levitation in the rapid thermal processing plant during the thermal treatment.
Inventors:
FUNK KLAUS (DE)
Application Number:
PCT/EP2003/013388
Publication Date:
March 17, 2005
Filing Date:
November 28, 2003
Export Citation:
Assignee:
MATTSON THERMAL PRODUCTS GMBH (DE)
FUNK KLAUS (DE)
FUNK KLAUS (DE)
International Classes:
H01L21/00; H01L21/683; H01L21/687; (IPC1-7): H01L21/00; H01L21/68
Domestic Patent References:
| WO2002090222A1 | 2002-11-14 | |||
| WO2000061474A1 | 2000-10-19 |
Foreign References:
| US20020116836A1 | 2002-08-29 |
Other References:
DATABASE WPI Section PQ Week 200003, Derwent World Patents Index; Class P43, AN 2000-033239, XP002277900
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