Title:
ULTRAVIOLET SENSOR AND METHOD OF MANUFACTURING ULTRAVIOLET SENSOR
Document Type and Number:
WIPO Patent Application WO/2012/023445
Kind Code:
A1
Abstract:
An ultraviolet sensor comprises: a p-type semiconductor layer (1) the main ingredient of which is (Ni, Zn) O; an n-type semiconductor layer (2) the main ingredient of which is ZnO joined to the p-type semiconductor layer (1); an inner electrode (4) embedded within the p-type semiconductor layer (1); and first and second terminal electrodes (3a, 3b) formed at both ends of the p-type semiconductor layer (1). The surface roughness of the p-type semiconductor layer (1) is to be not more than 1.5 μm, and preferably, not less than 0.3 μm and not more than 1.0 μm. In the manufacturing process, the surface of a pre-baking compact and/or a baked p-type semiconductor layer (1) is barrel polished to make the surface roughness thereof become not more than 1.0 μm. In such a way, light absorption efficiency is improved to enable a direct detection of the desired large photocurrent, favorable reliability is secured, and spectrum characteristic is controlled to enable the sensor to respond strongly to ultraviolet light having various wavelength bands.
Inventors:
NAKAMURA KAZUTAKA (JP)
Application Number:
PCT/JP2011/067959
Publication Date:
February 23, 2012
Filing Date:
August 05, 2011
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
NAKAMURA KAZUTAKA (JP)
NAKAMURA KAZUTAKA (JP)
International Classes:
H01L31/10
Foreign References:
| JP2010087482A | 2010-04-15 | |||
| JP2009260059A | 2009-11-05 | |||
| JP3560462B2 | 2004-09-02 | |||
| JP2003249665A | 2003-09-05 | |||
| JP2006278487A | 2006-10-12 | |||
| JP2009300206A | 2009-12-24 |
Attorney, Agent or Firm:
KUNIHIRO YASUTOSHI (JP)
Kunihiro Yasutoshi (JP)
Kunihiro Yasutoshi (JP)
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Claims: