Title:
UNDERLYING SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/195355
Kind Code:
A1
Abstract:
Provided is a high-quality underlying substrate comprising an alignment layer that is used for crystal growth of an oxide or a nitride of a group-13 element, wherein crystal defects (dislocations) are significantly reduced in the alignment layer. This underlying substrate comprises an alignment layer that is used for crystal growth of an oxide or a nitride of a group-13 element, wherein a surface of the alignment layer on the side used for crystal growth is formed of a material having a corundum crystal structure having an a-axis length and/or a c-axis length greater than those of sapphire, and a plurality of air holes are present in the alignment layer.
Inventors:
FUKUI HIROSHI (JP)
WATANABE MORIMICHI (JP)
YOSHIKAWA JUN (JP)
WATANABE MORIMICHI (JP)
YOSHIKAWA JUN (JP)
Application Number:
PCT/JP2020/006312
Publication Date:
October 01, 2020
Filing Date:
February 18, 2020
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C30B29/16; C30B23/08
Foreign References:
| JP2014072533A | 2014-04-21 | |||
| JP2000106348A | 2000-04-11 | |||
| JP2016100593A | 2016-05-30 |
Other References:
HAI-SHENG QIAN, POERNOMO GUNAWAN, YUN-XIA ZHANG,GUO-FENG LIN, JIAN-WEI ZHENG, RONG XU: "Template-Free Synthesis of Highly Uniform α-GaOOH Spindles and Conversion to α-Ga 2 O 3 and β-Ga2O3", CRYSTAL GROWTH & DESIGN, vol. 8, no. 4, 28 February 2008 (2008-02-28), pages 1282 - 1287, XP055743532, ISSN: 1528-7483, DOI: 10.1021/cg701004w
Attorney, Agent or Firm:
TAKAMURA Masaharu et al. (JP)
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