Title:
USE OF AMINE COMPOUND AND CHEMICAL-MECHANICAL POLISHING LIQUID
Document Type and Number:
WIPO Patent Application WO/2010/034181
Kind Code:
A1
Abstract:
The present invention discloses the use of an amine compound as shown by formula 1 for preparing a polishing liquid used to polish oxide dielectric materials, in which R1, R2 and R3 are hydrogen, (CH2)nCOOR4 or (CH2)nCONH2 respectively, but they are not hydrogen at the same time; n is 0 or 1; R4 is hydrogen, alkali metal ion, ammonium ion, or alkyl having 1~4 carbon atoms. The present invention further provides a chemical-mechanical polishing liquid comprising one or more of amine compound as shown by formula 1, silicon oxide, surfactant and water. The polishing liquid of the present invention can increase the polishing rate of the oxide dielectric materials, while the content of the abrasive particles is lower in the polishing liquid.
Inventors:
YAO DAISY YING (CN)
SONG PETER WEIHONG (CN)
SONG PETER WEIHONG (CN)
Application Number:
PCT/CN2009/001002
Publication Date:
April 01, 2010
Filing Date:
September 04, 2009
Export Citation:
Assignee:
ANJI MICROELECTRONICS TECHNOLO (CN)
YAO DAISY YING (CN)
SONG PETER WEIHONG (CN)
YAO DAISY YING (CN)
SONG PETER WEIHONG (CN)
International Classes:
C09G1/02; C07C229/04; C09K3/14
Domestic Patent References:
| WO2000024842A1 | 2000-05-04 | |||
| WO2009032065A1 | 2009-03-12 |
Foreign References:
| US6527819B2 | 2003-03-04 | |||
| US6468913B1 | 2002-10-22 | |||
| CN101044600A | 2007-09-26 | |||
| US20020081865A1 | 2002-06-27 | |||
| CN1422922A | 2003-06-11 | |||
| US20080105652A1 | 2008-05-08 |
Attorney, Agent or Firm:
HANHONG LAW FIRM (New Huangpu Financial BuildingNo. 61 East Nanjing Road, Shanghai 2, CN)
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