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Title:
UV-ENHANCED SILYLATION PROCESS TO INCREASE ETCH RESISTANCE OF ULTRA THIN RESISTS
Document Type and Number:
WIPO Patent Application WO2001084599
Kind Code:
A3
Abstract:
In one embodiment, the present invention relates to a method of processing an ultra-thin resist (16), involving the steps of depositing the ultra-thin resist (16) over a semiconductor substrate (12), the ultra-thin resist (16) having a thickness less than about 3,000 ANGSTROM ; irradiating the ultra-thin resist (16) with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist (16); and contacting the ultra-thin resist (16) with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist (16) with the silicon containing compound is conducted between irradiating and developing the utra-thin resist (16) or after developing the ultra-thin resist (16).

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Inventors:
RANGARAJAN BHARATH
SUBRAMANIAN RAMKUMAR
PHAN KHOI A
SINGH BHANWAR
TEMPLETON MICHAEL K
YEDUR SANJAY K
CHOO BRYAN K
Application Number:
PCT/US2001/012897
Publication Date:
July 18, 2002
Filing Date:
April 19, 2001
Export Citation:
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Assignee:
ADVANCED MICRO DEVICES INC (US)
International Classes:
G03F7/26; H01L21/027; H01L21/311; H01L21/3213; (IPC1-7): G03F7/40; G03F7/26
Domestic Patent References:
WO1997033199A11997-09-12
Foreign References:
US4751170A1988-06-14
US5688723A1997-11-18
EP0886185A21998-12-23
US6190837B12001-02-20
EP0394739A21990-10-31
US5707783A1998-01-13
US4931351A1990-06-05
Other References:
HARING R A ET AL: "X-RAY PHOTOELECTRON SPECTROSCOPY AND INFRARED STUDY OF THE PROCESSING OF A SILYLATED POSITIVE PHOTORESIST", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 9, no. 6, 1 November 1991 (1991-11-01), pages 3406 - 3412, XP000268557, ISSN: 0734-211X
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