Title:
UV RADIATION SYSTEM AND METHOD FOR ARSENIC OUTGASSING CONTROL IN SUB 7NM CMOS FABRICATION
Document Type and Number:
WIPO Patent Application WO/2018/052474
Kind Code:
A3
Abstract:
Implementations disclosed herein relate to methods for controlling substrate outgassing of hazardous gasses after an epitaxial process. In one implementation, the method includes providing a substrate comprising an epitaxial layer into a transfer chamber, wherein the transfer chamber has an ultraviolet (UV) lamp module disposed adjacent to a top ceiling of the transfer chamber, flowing an oxygen-containing gas into the transfer chamber through a gas line of the transfer chamber, flowing a non-reactive gas into the transfer chamber through the gas line of the transfer chamber, activating the UV lamp module to oxidize residues or species on a surface of the substrate to form an outgassing barrier layer on the surface of the substrate, ceasing the flow of the oxygen-containing gas and the nitrogen-containing gas into the transfer chamber, pumping the transfer chamber, and deactivating the UV lamp module.
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Inventors:
YAN CHUN (US)
BAO XINYU (US)
CHUNG HUA (US)
CHU SCHUBERT S (US)
BAO XINYU (US)
CHUNG HUA (US)
CHU SCHUBERT S (US)
Application Number:
PCT/US2017/015276
Publication Date:
July 26, 2018
Filing Date:
January 27, 2017
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
International Classes:
H01L21/02; H01L21/324; H01L21/67; H01L21/8238
Foreign References:
| US20110146705A1 | 2011-06-23 | |||
| US20110198509A1 | 2011-08-18 | |||
| US20130149462A1 | 2013-06-13 | |||
| US20150099350A1 | 2015-04-09 | |||
| KR100827476B1 | 2008-05-06 |
Other References:
See also references of EP 3513424A4
Attorney, Agent or Firm:
PATTERSON, B. Todd et al. (US)
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