Title:
VAPOR DEPOSITION METHODS OF SiCOH LOW-K FILMS
Document Type and Number:
WIPO Patent Application WO/2011/103282
Kind Code:
A3
Abstract:
Disclosed are precursors that are adapted to deposit SiCOH films with dielectric constant and Young's Modulus suitable for future generation dielectric films.
Inventors:
DUSSARRAT CHRISTIAN (US)
DONIAT FRANCOIS (US)
ANDERSON CURTIS (US)
MCANDREW JAMES J F (US)
DONIAT FRANCOIS (US)
ANDERSON CURTIS (US)
MCANDREW JAMES J F (US)
Application Number:
PCT/US2011/025234
Publication Date:
February 02, 2012
Filing Date:
February 17, 2011
Export Citation:
Assignee:
AIR LIQUIDE (FR)
AIR LIQUIDE AMERICAN (US)
DUSSARRAT CHRISTIAN (US)
DONIAT FRANCOIS (US)
ANDERSON CURTIS (US)
MCANDREW JAMES J F (US)
AIR LIQUIDE AMERICAN (US)
DUSSARRAT CHRISTIAN (US)
DONIAT FRANCOIS (US)
ANDERSON CURTIS (US)
MCANDREW JAMES J F (US)
International Classes:
C23C16/30; C23C16/18; C23C16/50; H01L21/205
Domestic Patent References:
| WO2009119583A1 | 2009-10-01 |
Foreign References:
| US20080283972A1 | 2008-11-20 | |||
| KR20090115915A | 2009-11-10 | |||
| US7579286B2 | 2009-08-25 | |||
| US7345000B2 | 2008-03-18 |
Other References:
See also references of EP 2536867A4
Attorney, Agent or Firm:
MCQUEENEY, Patricia E. et al. (LLC2700 Post Oak Blvd.,Suite 180, Houston Texas, US)
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