SUBSTRATE

TECHNICAL FIELD

[0001] Embodiments relate to a substrate support for vacuum processing. Embodiments of the present disclosure particularly relate to a support with a support body and a dry adhesive attached to the support body for processing a substrate, a vacuum processing apparatus including a vacuum chamber, a substrate support within the vacuum chamber and a processing station and a substrate processing system. Embodiments of the present disclosure further relate to a substrate processing system including a load chamber, a vacuum transfer chamber and a vacuum processing apparatus.

BACKGROUND

[0002] Various techniques for layer deposition on a substrate, for example thermal evaporation, chemical vapor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) such as sputter deposition are known. The sputter deposition process can be used to deposit a material layer on the substrate, for example a layer of insulating material. This involves ejecting material from a target onto a substrate. The target material to be deposited on the substrate is bombarded with ions generated in a plasma region to dislodge atoms of the target material from a surface of the target. The dislodged atoms can form the material layer on the substrate. In a reactive sputter deposition process, the dislodged atoms can react with a gas in the plasma region, for example nitrogen or oxygen, to form an oxide, a nitride or an oxynitride of the target material on the substrate.

[0003] Coated material can be used in several applications and in several technical fields. For instance, coated material may be used in the field of microelectronics, such as for generating semiconductor devices. Also, substrates for displays can be coated using a physical vapor deposition process. Further applications include insulating panels, organic light emitting diode (OLED) panels, substrates with thin film transistors (TFTs), color filters or the like.

[0004] The tendency towards larger substrates with more complex and thinner coatings results in larger process modules. Vertical process modules connected in series have some drawbacks due to the footprint, redundancy and cost issues. In the vertical process position, the glass is aligned with a mask to avoid coating on the glass edge and/or on the back side and to seal the process room from a glass handle area. Clamps hold the substrate on the edges of the substrate during the process. This leads to issues with particles and uniformity due to glass mask alignments (shadowing effect), and side deposition on the clamps.

[0005] In light of the forgoing, there is a need to provide holding arrangements for holding a substrate, process systems and methods for holding and processing a substrate that improve at least some aspects of the problems in the art.

SUMMARY

[0006] In light of the above, a substrate support for substrate processing, a vacuum processing apparatus, methods for processing a substrate and a substrate processing system according to the independent claims are provided. Further aspects, advantages and features of the present disclosure are apparent from the description and the accompanying drawings.

[0007] A vacuum processing apparatus for processing a substrate is provided. The vacuum processing apparatus includes a vacuum chamber; at least two processing stations adjacent to the vacuum chamber and operationally coupled to the vacuum chamber, a surface of a substrate has different orientations when the substrate is treated in different processing stations and at least one of the processing stations comprises a linear source with a longitudinal axis, for treating the substrate; and a substrate support. The substrate support includes a support body for holding a substrate; and an actuator configured to move the support body from a non-vertical position around an axis in front of the processing station to a non-horizontal position. [0008] A vacuum processing apparatus for processing a substrate is provided. The vacuum processing apparatus includes a vacuum transfer chamber; at least two processing stations coupled to the vacuum transfer chamber, and at least one of the processing stations comprises a linear source with a longitudinal axis, for treating the substrate; and a substrate support. The substrate support includes a support body for holding a substrate; and an actuator to move the support body by an angle from a horizontal orientation in the vacuum transfer chamber to a vertical orientation in the at least one processing station.

[0009] A method for processing a substrate is provided. The method includes providing a substrate on a support in the vacuum chamber; moving the substrate by a support from a non-vertical position to a non-horizontal position; treating the surface of the substrate with a linear source, and moving the substrate parallel to the linear source.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] So that the manner in which the above recited features can be understood in detail, a more particular description, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments and are described in the following figures:

FIG. 1 shows a schematic side view of a substrate support holding a substrate and moving the substrate in a processing area, e.g. by moving the substrate by an angle;

FIG. 2 shows a schematic side view of a substrate support;

FIG. 3 shows a schematic side view of a substrate support;

FIG. 4 shows a schematic top view of an exemplary substrate support;

FIG. 5 shows a schematic top view of a further exemplary substrate support;

FIG. 6 shows a schematic top view of a further exemplary substrate support; FIG. 7 shows a side view of a substrate on an exemplary substrate support, in front of a deposition source in a vacuum processing chamber, according to embodiments;

FIG. 8 shows a side view of a substrate on an exemplary substrate support, according to embodiments;

FIG. 9 shows a schematic side view of a vacuum chamber and an adjacent vacuum processing chamber, according to embodiments;

FIG. 10 shows a schematic top view of an exemplary substrate processing system including a hexagonal shaped transfer chamber;

FIG. 11 shows a schematic top view of a substrate processing system including a hexagonal shaped transfer chamber, according to embodiments;

FIG. 12 shows a schematic top view of a further substrate processing system including a hexagonal shaped transfer chamber, according to embodiments;

FIG. 13 shows a schematic cross sectional view of a vacuum processing chamber including a linear source, according to embodiments;

FIG. 14 shows a schematic cross sectional view of a vacuum processing chamber including a rotatable cylindrical target, according to embodiments;

FIG. 15 shows a schematic flow chart of a method of processing a substrate, according to embodiments.

DETAILED DESCRIPTION OF EMBODIMENTS

[0011] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to the same or to similar components.

Generally, only the differences with respect to individual embodiments are described.

Each example is provided by way of explanation and is not meant as a limitation.

Furthermore, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations. Unless specified otherwise, the description of a part or aspect in one embodiment applies to a corresponding part or aspect in another embodiment as well.

[0012] FIG. 1 shows a schematic side view of an exemplary substrate support 100 being moved by an angle around an axis 160. The support body 110 has a first surface 125 for supporting the substrate. The substrate may be fixed with one or more clamps and/or, as shown in FIG. 1, a dry adhesive 120 may be provided on the first surface 125. The back surface 115 of substrate 101 is attached or coupled to the first surface, e.g. by clamps or the dry adhesive 120. The front surface 113 of the substrate 101 is the surface to be processed, particularly on which a material layer is to be deposited. The movement of the support body 110 can be described by a rotation around a joint 140 arranged at the support body 110, wherein the joint 140 forms an axis of rotation 160. The movement of the support body 110 can also be understood as a folding up or a flap up movement. The dashed contours 111 show the support body being moved around an angle. In all embodiments described herein, clamps may be alternatively chosen to hold the substrate, on the edges of the substrate, during the process, instead of the dry adhesive.

[0013] The substrate 101 is moved by angle 165, e.g. by a rotation about an axis 160, into a processing area 170 as depicted by the dashed contours 111. The movement of the substrate by an angle into a processing area can be described as a substantially angular displacement. In embodiments, the movement of the substrate by an angle can also have a portion of a translation motion, wherein the axis of rotation is displaced, in particular towards the processing area. With reference to FIG. 1, the support body 110 can be moved by a translation movement aligned with a horizontal direction 180 and by an angle 165 about an axis of rotation 160 towards the processing area 170. A support body configured to move the substrate by an angle can be understood as a rotatable mounted support body configured at least to rotate or swing around an axis, e.g. around a joint to change the orientation of the substrate surface being attached to the support body. According to some embodiments of the present disclosure, a movement or shifting of the support body 110 is further provided relative to a source, i.e. during treating of the substrate. For example, in FIG. 1, a movement or shifting may be provided perpendicular to the picture plane in FIG. 1.

[0014] According to embodiments, which can be combined with other embodiments described herein, the support body is configured to move the substrate from a non vertical position to a non-horizontal position. A non-vertical position can be understood particularly when referring to the substrate orientation, to allow for a deviation from the horizontal direction or orientation of +/- 20 °or below, e.g. +/- 10° below. Likewise, a non-horizontal position can be understood to allow for a deviation from the vertical direction or orientation of +/- 20 °or below, e.g. +/- 10° below. A deviation from a vertical position of a substrate support might result in a more stable substrate position, e.g. during a substrate processing, in particular during a layer deposition process. Furthermore, it can be beneficial to have a deviation of a horizontal position of the substrate to facilitate the transport and/or the alignment of the substrate, in particular before moving the substrate in a processing area. According to some embodiments, which can be combined with other embodiments described herein, the substrate positions may also be referred to as substrate orientations.

[0015] In the present disclosure, a substrate support for a substrate processing is provided. The substrate support includes a support body, a holding arrangement for the substrate, and the support body is configured to move the substrate by an angle in a processing area. A surface of a substrate has different orientations when the substrate is treated in different processing stations, and at least one of the processing stations comprises a linear source with a longitudinal axis, for treating the substrate.

[0016] According to embodiments, a substrate support is to be understood as a support which is configured for holding a substrate as described herein, particularly a large area substrate. Typically, the terms substrate support, carrier and support are used synonymously. The substrate held or supported by the substrate support as described herein includes a front surface and a back surface, wherein the front surface is a surface of the substrate being processed, for example the front surface is the surface on which a material layer is to be deposited. Typically, the substrate support is configured such that the back surface of the substrate can be attached to the carrier, particularly with one or more clamps or with a dry adhesive of the substrate support. According to different embodiments, the support body may include a plate or may include a frame-shaped structure. A frame-shaped structure is configured to support the substrate, e.g. a rectangular substrate, at a perimeter of the substrate.

[0017] The term substrate as used herein may be an inflexible substrate, e.g. a glass plate, a metal plate, a wafer, slices of transparent crystal, a glass substrate or a ceramic plate. However, the present enclosure is not limited thereto, and the term substrate can also embrace flexible substrates such as a web or a foil, e.g. a metal foil or a plastic foil. According to embodiments, which can be combined with any other embodiments described herein, the substrate can be made of any material suitable for material deposition. For instance, the substrate can be made of a material selected from the group consisting of glass, such as soda-lime glass or borosilicate glass, metal, polymer, ceramic, compound materials, carbon fiber material, mica or any other material or combination of materials capable of being coated by a deposition process. For example, a thickness of the substrate in a direction perpendicular to the main surface of the substrate can be within a range from 0.1 mm to 1.8 mm, such as 0.7 mm, 0.5 mm, or 0.3 mm. In some embodiments, the thickness of the substrate may be 50 pm or more. The thickness of the substrate can also be 900 pm or less.

[0018] According to embodiments, which can be combined with other embodiments described herein, the substrate can be a large area substrate. A large area substrate may have a surface area of 0.5 m or more. Typically, a large area substrate may be used for display manufacturing and may be a glass or plastic substrate. For example, substrates as described herein shall embrace substrates used for an LCD (Liquid Crystal Display), an OLED (organic light-emitting diode), and the like. For instance, a large area substrate can have a main surface with an area of 1 m or larger. In some embodiments, a large area substrate can be GEN 2 corresponding to 0.37m x 0.47m, GEN 4.5, which corresponds to about 0.67 m substrates (0.73m x 0.92m), GEN 5, which corresponds to about 1.4 m substrates (1.1 m x 1.3 m), or larger. A large area substrate can further be GEN 7.5, which corresponds to about 4.29 m ² substrates (1.95 m x 2.2 m), GEN 8.5 which corresponds to about 5.7 m substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrates areas can be similarly implemented. [0019] According to embodiments, a support body can be understood as an arrangement configured to hold a substrate. For instance, the support body can be a rigid body, such as a frame or a plate. In particular, the support body can be configured to support a surface of a substrate, such as the back surface of a substrate. For example, the support may support a perimeter or an edge region of the substrate, e.g. with a frame-shaped structure.

[0020] In the present disclosure, a holding arrangement may include optionally a dry adhesive configured to provide an adhesive force for attaching a substrate described therein. In particular, the dry adhesive can be provided on or attached to the support body, such that a substrate as described therein can be held by the support body via the dry adhesive. More specifically, the dry adhesive may include a dry adhesive material as described herein. The dry adhesive material can be configured for providing the adhesive force by van der Waals force. The dry adhesive is configured to form a connection between a substrate surface and a substrate support, in particular between a substrate surface and a substrate support surface. The connection between the substrate and the dry adhesive can be slip-resistant or nonskid and the like. Advantageously; the connection between a substrate and the dry adhesive can be residue-free disconnected, for example after substrate processing, in particular after a deposition process.

[0021] In the present disclosure, a holding arrangement may be provided with one or more clamps, particularly with a plurality of clamps, e.g. 4 or more clamps. For a large- area substrate, two or more clamps may be provided on each side of the substrate. A clamp can be provided as a slit, in which the substrate may be allowed to have some movement of the substrate. Additionally or alternatively, a clamp may be provided as a spring clamp element or a lever clamp element to fix the substrate relative to the support body. According to some embodiments, which can be combined with other embodiments described herein, a combination of clamps fixing a position of a substrate portion and clamps allowing a movement of a position of a substrate portion can be provided. For example, thermal expansion in combination with a defined substrate position can be provided with such a combination.

[0022] With exemplary reference to FIG. 2, according to embodiments which can be combined with any other embodiments described herein, the dry adhesive 120 can be attached to a back surface 115 of a substrate 101 providing an adhesive force for holding the substrate 101. Typically, the back surface 115 of the substrate is not to be processed. The dry adhesive 120 can include filaments 121, in particular a plurality of filaments 121 for attaching the back surface 115 of the substrate 101 with one end. The term filament can be synonymously used with the term adhesive structure.

[0023] In particular, each filament of the plurality of filaments 121 can extend away from the first surface 125 of the support body 110, for instance perpendicular to the first surface 125 of the support body 110. Accordingly, each filament of the plurality of filaments 121 can have a second end, for instance for an attachment of the substrate 101 as described herein. In particular, the second end of each filament of the plurality of filaments 121 can be configured to be attachable to the substrate 101. Specifically, the second end of each filament can be configured to adhere to the substrate 101 by van der Waals forces as described herein.

[0024] According to embodiments, which can be combined with other embodiments described herein, the filaments can include or be nanotubes or carbon nanotubes. Each of the plurality of filaments can be a substantially longitudinal member. Specifically, each of the plurality of filaments can have one dimension that is larger than the remaining two dimensions. In particular, the longest dimension of the filaments can be the length of the filament. That is, the filaments can be elongated along a length direction. Additionally or alternatively, the plurality of filaments can be made of or include a polymeric material, particularly a synthetic polymeric material.

[0025] According to embodiments, the dry adhesive can be a synthetic setae material. The adhesive capabilities of the dry adhesive, specifically of the synthetic setae material, can be related to the adhesive properties of a gecko foot. The adhesive capability of the gecko feet is provided by numerous hair-type extensions, called setae, on the feet of the gecko. It is noted here that the term synthetic setae material can be understood as a synthetic material emulating the natural adhesive capability of the gecko foot and including similar adhesive capabilities to the gecko foot. Moreover, the term synthetic setae material can be synonymously used with the term synthetic gecko setae material or with the term gecko tape material. For example, a support body having a gecko adhesive material may also be referred to as G-chuck. However, the present disclosure is not limited thereto, and other dry adhesive materials suitable for holding the substrate.

[0026] According to embodiments, which can be combined with any other embodiments described herein, the dry adhesive material, for example the synthetic setae material can be inorganic. According to some embodiments described herein, the dry adhesive can be substantially 100 % inorganic.

[0027] According to embodiments, which can be combined with any other embodiments described herein, the dry adhesive can be a gecko adhesive. For example, the gecko adhesive may be a gecko tape or a gecko element.

[0028] In the present disclosure, a gecko adhesive can be understood as an adhesive that mimics the ability of gecko feet to adhere to surfaces such as for example vertical surfaces. In particular, the dry adhesive as described herein can be configured to adhere to the substrate due to van der Waals forces between the dry adhesive and a surface of a substrate. According to embodiments, the adhesive force provided by the adhesive can be provided for holding a substrate as described herein. In particular, the dry adhesive can be configured to provide an adhesive force of about 3 N/cm or about 4 N/cm or about 5 N/cm more.

[0029] According to embodiments, the dry adhesive comprises at least one dry adhesive element, in particular a plurality of dry adhesive elements. With exemplary reference to FIG. 3 showing a schematic cross-sectional view according to embodiments, the dry adhesive 120 can include dry adhesive elements 420 arranged on a surface 125 on a substrate support 100. The dry adhesive elements 420 form, when attached to a back surface 115, an attached area 440 to hold the substrate. Providing more, in particular a plurality of, dry adhesive elements 420 may form gaps 450 between the dry adhesive elements 420, wherein other supporting elements, not shown, can be arranged on the support body. Supporting elements can, for example, include conduits for gas and/or liquids to support the substrate during processing by, for example, heating or cooling. Furthermore, within the gaps 450 supporting elements for detaching the substrate 101 from the support body 110 can be provided, wherein the supporting elements enable or facilitate the detaching process. [0030] According to some embodiments, the dry adhesive elements can be arranged on the support body in various patterns. With reference to FIG. 4 showing a top view of a pattern of dry adhesive elements 420 arranged on a surface 125 of a support body 110, the dry adhesive elements 420 have a square shape and are periodically arranged on the surface. Gaps 450 are formed between the dry adhesive elements 420, wherein the gaps on the edges on the substrate support 100 form edge zones, represented by the hatched areas or zones 475, without adhesive elements. The edge zones 475 can facilitate or allow for the attachment process of a substrate on the dry adhesive elements 420 within the attached areas 440. According to some embodiments, which can be combined with other embodiments described herein, at least a part of the dry adhesive elements 420 can be rotatably mounted on the substrate support. For example, a rotation, particularly a rotation having an axis perpendicular to the substrate surface, may facilitate the release of the substrate from the adhesive element. In FIG. 5, a top view of a further example of a pattern of dry adhesive elements arranged on a support body is shown. The adhesive elements form strip-like attachment areas 445, wherein the attachment areas 445 are aligned parallel to each other. Furthermore, with reference to FIG. 6, the attachment areas 445 can be formed in a ring-structure shape. The attachment areas 445 are arranged parallel to the edge zones of the support body.

[0031] According to embodiments, before a substrate is arranged on a support body, the substrate can be aligned with the support body. The alignment can be for example carried out by a transport frame, wherein the transport frame transports a substrate being in a horizontal position above the substrate support. A pin array can be provided to attach the substrate on the substrate support body in an aligned or centered manner. The substrate can also be aligned by simple pushers before the substrate is put on the substrate support and attached by clamps or by a dry adhesive.

[0032] After alignment, the substrate can be attached on the support body 110, for example in a horizontal orientation. The support body can subsequently be positioned in a vertical direction. Due to the gravity forces upon change of orientation, a substrate may undergo sagging. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, gecko structures may be provided to allow for a combination of reduced sagging and easy release of the substrate from the gecko structures after processing. As was previously mentioned, the described adhesive-based solution may be accompanied, or completely replaced, by a solution with clamps. For example, after positioning the substrate in a non-horizontal orientation, e.g. a vertical orientation, a substrate may be supported by clamps provided at a lower side of the substrate.

[0033] For example, the cross-section of a gecko structure can have an elongated shape. For instance, an elongated cross-section can be of an elliptic shape having a major and a minor extension or axis. Further, an elongated cross-section can be of a quadrangular shape having a major and a minor diagonal. Moreover, an elongated cross-section can be of a rectangular shape having a major and a minor lateral length. In this context, the terms major and minor relate to the dimension of length. For example, major relates to a length longer than a minor length. Accordingly, an orientation with the longer length of the cross-section provides for stability to avoid sagging. A release of a substrate from a gecko structure can be provided by a movement in a different direction. For example, the different direction can be parallel or essentially parallel to an orientation of the shorter length of the cross-section.

[0034] According to embodiments, a dry adhesive element for holding a substrate can be provided. The dry adhesive element includes a surface configured to face the substrate, and the surface of the dry adhesive element includes a plurality of adhesive structures. The plurality of adhesive structures includes a first adhesive structure protruding from the surface, wherein the first adhesive structure has an anisotropic flexibility parallel to the surface. For example, the plurality of adhesive structures can have an anisotropic flexibility parallel to the surface.

[0035] A dry adhesive element for holding a substrate can be provided. The dry adhesive element includes a surface configured to face the substrate and a dry adhesive provided over the surface and including a plurality of adhesive structures. The plurality of adhesive structures includes a first adhesive structure protruding from the surface and a second adhesive structure protruding from the surface. The first adhesive structure bends differently when bent in a given direction compared to the second adhesive structure when bent in the same direction with the same force. [0036] Accordingly, beneficially, in the present disclosure, the method for holding a substrate using clamps or a dry adhesive element as described herein substantially avoids sagging of the substrate irrespective of the mounting direction of the substrate with respect to the dry adhesive element.

[0037] According to embodiments, which can be combined with other embodiments described herein, the dry adhesive can be configured to have a total attachment area which corresponds to at least 75 % of the back surface of the substrate. The term total attachment area can be understood as the sum of all the attachment areas. In particular, the dry adhesive can be configured to have a total attachment area which corresponds to at least 80 % of the back surface of the substrate, more particularly to at least 90 % of the back surface of the substrate.

[0038] FIG. 7 shows a schematic side view of a substrate support 100 holding a substrate 101 in a processing area 170 within a range of a deposition source 801. The deposition source may include a rotary target 805 (or a planar target) for depositing a material 807 to a front surface 113 of the substrate 101. The substrate 101 is held in a non-horizontal position, as described herein, by clamps or a dry adhesive, for example by a gecko tape material. According to yet further embodiments, a substrate may also be supported by an electrostatic chuck, i.e. a support providing electrostatic holding forces.

[0039] According to embodiments, a mask is arranged in front of the substrate wherein the mask covers an edge area of the substrate. For instance, a mask may be an edge exclusion mask or a shadow mask or the like. An edge exclusion mask is a mask configured to mask one or more edge regions of a substrate, such that no material is deposited on the one or more edge regions of a substrate during the coating and/or processing of the substrate.

[0040] According to embodiments, as depicted in FIG. 7, a mask 132 is arranged on or at the front surface 113 of the substrate 101. The mask 132 may be arranged within a close distance 135 from the substrate 101 in front of the substrate 101 i.e. between the substrate 101 and the deposition source 801.

[0041] The distance 135 between the mask 132 and the edge areas of the substrate can be less than 2 mm, in particular less than 1,5 mm, or more particular less than lmm. The mask 132 can cover the edge areas 127 of the front surface 113 of the substrate 101. As another example, the mask can be arranged in front of the front surface 113 such that at least a portion of the mask 132 is brought into contact with the front surface 113 to reduce shadowing effects. The term direct contact can be understood such that the mask 132 touches or contacts or abuts on the substrate, in particular on the edge areas 127, wherein the distance 135 can be substantially zero.

[0042] As described above, an edge exclusion, an edge exclusion mask or a mask can be located between the substrate, e.g. a glass, and the processing station, e.g. a deposition source. According to embodiments described herein, which can be combined with other embodiments, the glass-mask-distance can be reduced by the dry adhesive arrangement. The glass-mask-distance can be as small as possible, since the glass edge is straight and no clamp would interfere with the edge exclusion, i.e. the masking.

[0043] According to embodiments, the substrate 101 supported by the support body 110 may be moved by an angle directly towards a mask 132 in a processing area. The mask 132 could be fixed in a stationary manner in the processing area to facilitate the mask arrangement. Alternatively, the support body can experience a translational movement towards the mask, e.g. after a rotation.

[0044] According to embodiments, a vacuum processing apparatus is provided including a vacuum chamber, a substrate support within the vacuum chamber, and a processing station. The substrate support includes a support body, a holding arrangement at the support body and an actuator moving the support body around an axis in front and away from the processing station. The term vacuum, as used herein, can be understood in the sense of a technical vacuum having a vacuum pressure of less than, for example, 10 mbar. Typically, the pressure in a vacuum chamber as described herein may be between 10 -5 mbar and about 10 -8 mbar, more typically between 10 -5 mbar and 10 ⁷ mbar, and even more typically between about 10 ⁶ mbar and about 10 ⁷ mbar.

[0045] A processing station can be understood as a processing module or a processing chamber, in particular a chamber having a vacuum atmosphere, including at least one processing device. A processing device can be understood as a device having an impact on a substrate brought near or close to the processing device, in particular within a processing area of the processing device in a vacuum atmosphere. Processing devices can include devices for depositing material on a surface of the substrate, such as devices configured for coating processes, like chemical vapor deposition, physical vapor deposition, or processing devices can include devices for etching a substrate. Depositing may be provided by sputtering devices. Processing devices can also be understood as devices for carrying out heat treatment, cooling, radiation, ion treatment, or plasma treatment processes. Typically, the distance between a processing device and a surface of the substrate being processed can be around 300 mm or less, in particular the distance can be between 240mm and 260 mm.

[0046] In the present disclosure, an actuator for moving the support body around an axis can be understood as an extendable cylinder, for example, a hydraulic, pneumatic, mechanical or electric driven cylinder configured to move a support body around an axis in front of the processing station. An actuator can also be understood as a linear actuator with a rack and pinion system. An axis, in particular an axis of rotation, can be configured as a pivot, a swivel, swing or a rotating joint. The axis may include an actuator, for example having a motor and a gear. The axis can be directly driven. A motor and/or a gear can be provided. An actuator can be self-driven or a rotatable mounted rod. The actuator can be fixed to the support body and/or the axis.

[0047] With exemplary reference to FIG. 15, embodiments of a method 400 for processing a substrate are provided. The method 400 includes providing an apparatus in a block 401, providing a substrate on the support in the vacuum chamber in a block 402, moving the substrate, by the support, from a non-vertical position to a non-horizontal position, and moving the support to the processing chamber, in a block 403; treating the surface of the substrate by a beam from the linear source in a block 404, shifting the substrate in parallel along the linear source in a block 405.

[0048] With reference to FIG. 8, an example of a schematic embodiment of a substrate support 100 in a vacuum chamber is shown. A positioning cylinder 150 and a joint 140 are provided on a lower surface 114 of the support body 110. The support body 110 is moved by the positioning cylinder 150 pushing the support body 110 by extending. The support body 110 is mounted to the joint 140. When the positioning cylinder 150 is extended, the support body 110 moves from a non-vertical position into a non-horizontal position. The movement of the support body can be described as a flip- movement, a swing movement or the like around the joint 140, and may form an axis of rotation 160. The substrate 101, in particular the front surface 113 of the substrate 101 can be processed in the non-horizontal position by the deposition source 801. After processing the substrate 101, the positioning cylinder 150 is retracted, wherein the support body 110 is moved away from a processing area of a deposition source to the starting position. The starting position can be understood as a position of the substrate being in the non- vertical position, wherein the substrate is not processed.

[0049] According to embodiments, which can be combined with any other embodiments described therein, the support body 110 can include a support base 145 provided at a lower surface 114 of the support body 110. The support base 145 can be arranged movably or displaceably on a floor, for example on the floor of a vacuum chamber. The support base 145 of the support body 110 can for example be provided with rollers or runners or the like sliding on the floor for enabling the support body 110 to move in a lateral direction away from or towards a processing region, in particular away from or towards a processing station. The lateral movement of the support body can be carried out additionally to the movement of the support body by an angle as described herein.

[0050] According to embodiments, which can be combined with any other embodiments described herein, the vacuum processing apparatus can be formed by connecting a vacuum chamber and a processing station with each other. The interiors of the vacuum chamber and the processing station can be formed to one combined interior having the same vacuum atmosphere.

[0051] FIG. 9 shows an exemplary vacuum processing apparatus 550 including a vacuum chamber 570 and a processing station 555. The vacuum chamber 570 can be provided with stands 525. The vacuum chamber can include or can be connected to a processing station 555. The processing station 555 can be provided with support pillars 545. [0052] According to embodiments, which can be combined with other embodiments described herein, as illustrated in FIG. 10, the substrate processing system 600 can include a vacuum transfer chamber 610 wherein more than one, in particular a plurality of, vacuum processing apparatuses 550A, 550B, 550C are arranged adjacent to the vacuum transfer chamber 610. A substrate 101 is transferred to the vacuum transfer chamber 610 e.g. through a load chamber 510. The vacuum transfer chamber 610 can move the substrate 101 to a first vacuum chamber 570A. The substrate processing system can include a support chamber arranged on the vacuum transfer chamber 610 to perform specific additional functions like storing substrates or the like.

[0053] The substrate 101 can be arranged or attached on the support body 110 by clamps or by a dry adhesive of the substrate support 100 in the first vacuum chamber 570A. The substrate support 100 moves the substrate 101 by an angle from a non vertical position to a non-horizontal position in a processing area of the processing station 555A in front of a mask (not shown) as described herein. After the processing of the substrate 101 in the processing area of the processing station 555 A, the substrate is moved out of the processing area in a non-vertical position into the vacuum chamber 570A. The substrate 101 is moved out of the vacuum chamber 570A back to the vacuum transfer chamber 610. After obtaining the substrate 101 from the vacuum chamber 570A, the vacuum transfer chamber 610 can move the substrate 101 to a further vacuum processing apparatus 550B or 550C or 550D including further processing stations 555B, 555C, 555D respectively.

[0054] According to embodiments, the movement of the substrate 101 from a vacuum chamber 570A to a further vacuum chamber 570B, 570C, 570D can be understood as a lateral movement of the substrate 101, wherein the substrate 101 is moved while being in a non- vertical position. The vacuum transfer chamber 610 can be configured to rotate the substrate 101 e.g. to enable an alignment of the substrate 101 before moving the substrate 101 to a process chamber. The substrate 101 can be moved by the vacuum transfer chamber 610 to any other vacuum chamber 570 A, 570B, 570C arranged on the vacuum transfer chamber 610 in an undetermined sequence.

[0055] According to embodiments, a processing system can be provided. A processing system includes a load module, a transfer chamber and a vacuum processing apparatus. A processing system can include more than one load module, transfer chamber or vacuum processing apparatus.

[0056] A load module can be understood as a module capable of an intake or an acceptance of a substrate. The load module can be a chamber with an opening at one side being configured to receive a substrate. The load module can be connected to a transporting device being configured to transport a substrate to the load module. For example, a load module can be understood as an air lock for transferring a substrate to a chamber with low pressure, in particular to a chamber with vacuum pressure. According to embodiments, the load module is connected to a vacuum transfer chamber.

[0057] A vacuum transfer chamber can be understood as a chamber with vacuum pressure connected to other substrate processing modules, chambers or devices. The vacuum transfer chamber can be configured to move a substrate to other modules or devices connected to the vacuum transfer chamber for further substrate processing.

[0058] According to embodiments, more than one vacuum processing apparatus is arranged at the vacuum transfer chamber, in particular at the outer wall of the vacuum transfer chamber. The vacuum transfer chamber can form a transporting path configuration between the vacuum processing apparatuses.

[0059] The vacuum transfer chamber can be understood as a transporting path configuration, wherein several substrate processing modules, like process apparatuses, are arranged at the lateral areas of the transporting path configuration. Each substrate processing module or substrate processing system can be connected to the transporting path configuration, for example by an opening or by an air-lock.

[0060] According to embodiments, the substrate processing system can include more than one substrate process apparatus arranged next to each other. In a first process apparatus, an actuator moves a substrate support body around an axis into a processing area of a processing station as described herein. For further processing, the substrate can be moved to further processing apparatuses, wherein the substrate is moved in a non vertical position from one process apparatus to another process apparatus. [0061] According to embodiments, the vacuum transfer chamber can have a polygon- shape or a circular design. A polygon-design can for example include a triangular shaped, a square- shaped, a pentagon- shaped, hexagon-shaped design, or a polygon with more comers. A vacuum process chamber can be arranged on one edge or on more edges or on each edge of the polygon-shaped designs of the vacuum transfer chamber. When more than one vacuum process chamber is provided, the vacuum transfer chamber can be arranged in the middle or in the center of the vacuum process chambers. The arrangement of the vacuum transfer chamber in the center or in the middle of the vacuum transfer chamber enables a cluster-like design of a substrate processing system. More than one vacuum process chamber can be arranged on the vacuum transfer chamber, wherein each chamber has the same distance from a center point of the vacuum transfer chamber. It is further possible to arrange storage modules for substrates or any other substrate support modules at one or more edges of the polygon-shaped design vacuum transfer chamber.

[0062] According to embodiments, it is possible to connect two or more cluster-like substrate processing systems as described herein and enable substrate transporting and further substrate processing between the two or more substrate processing systems.

[0063] According to embodiments, the vacuum transfer chamber is configured to transfer the substrate being attached to the substrate support to the vacuum processing apparatus. The substrate being attached can be understood as the substrate which is kept attached and/or is held by the dry adhesive on the substrate support while transported within the vacuum transport chamber. The movement of the substrate support can be understood as a displacement in a horizontal direction. The displacement can be carried out by a guiding system with rollers or the like. Keeping the substrate attached to the support body has the advantage that further attaching and detaching operations of the substrate with the clamps or the dry adhesive of the support body can be avoided when the substrate enters a vacuum process chamber and/or enters the vacuum transfer chamber again after processing. Keeping the substrate attached to the support body can also accelerate the substrate processing process.

[0064] According to embodiments, which may be combined with other embodiments described herein, a substrate processing system 600 such as is described exemplarily with respect to Fig. 11 is provided, wherein at least one of vacuum processing apparatuses 550A, 550B, 550C comprises a processing station, e.g. a deposition chamber 556, with a linear source 130.

[0065] Such a linear source 130 may be a linear implantation source, such as a vertical linear implantation source, or a vertical deposition source. The term“linear” can be understood in the sense that the linear source 130 has a major dimension and a minor dimension defining an emission area of the particles or ions (e.g., a substantially, or at least approximately a rectangular area), wherein the minor dimension is less than the major dimension. For example, the minor dimension can be less than 10%, specifically less than 5% and more specifically less than 1% of the major dimension. The major dimension can extend substantially vertically. In other words, the at least one linear source 130 can be a vertical linear source. According to some embodiments, a beam width of the particles or ions provided by the at least one linear source 130, e.g., the emission area, can be in a range of between lmm to 300mm, specifically in a range of between lOmm to lOOmm, and more specifically less than 50mm. The beam width can be defined perpendicular to the linear extension of the at least one linear source.

[0066] In some implementations, the linear source can have one or more outlets or particle sources (e.g., ion sources) arranged along a vertical line, e.g., in the major dimension, configured to provide the particles and/or the emission area. As an example, one continuous outlet or particle source can be provided. In other examples, a plurality of outlets or particle sources can be arranged along a line. For instance, the linear source can consist of multiple point sources closely aligned next to each other along the line.

[0067] Generally, in embodiments, the linear source 130 may be configured for a pretreatment, a cleaning process for the surface of the substrate, an ion implantation into the substrate or into a layer which was previously deposited on the substrate, or a deposition of a layer on the substrate.

[0068] In embodiments, the linear source 130 is configured for a cleaning or a pre treatment of a substrate, which may for example include the removal of TiO.

[0069] According to some embodiments, which can be combined with other embodiments described herein, the linear source 130 can be configured to emit a beam 134 of energetic particles (e.g. ions or electrically neutral particles) as shown in Fig. 13. The linear source 130 can be configured to provide ions or electrically neutral atoms. The ions can, for example, be selected from the group including nitrogen ions, oxygen ions, hydrogen ions, indium ions and gallium ions. Likewise, the electrically neutral atoms can be selected from the group including, for example, nitrogen atoms, oxygen atoms, hydrogen atoms, indium atoms and gallium atoms. The particles, such as the ions, are implanted in the substrate 10, a surface 11 of the substrate, or the first material layer on the substrate 10, to change one or more material properties of the material into which the particles are implanted.

[0070] The linear source can include an ion source configured to generate ions and an accelerator configured for accelerating the ions provided by the ion source. The ion source can be configured to provide an inductively coupled plasma (ICP). As an example, the ion source can include a coil electrically connected to a power supply, such as a radiofrequency (RF) power supply. A current can be applied to the coil and a plasma can be generated by excitation of a process gas inside the ion source. In further implementations, the ion source can be configured to provide a charged coupled plasma (CCP) using a plate.

[0071] According to some embodiments, the linear source 130 can be configured for implantation of the ions generated by the ion source in the substrate 10 or a first material layer. In other embodiments, the linear source is configured to electrically neutralize the generated ions, e.g. after the acceleration of the ions, for implantation of electrically neutral particles in the substrate or the first material layer. As an example, the linear source further includes a neutralizing device for electrically neutralizing the accelerated ions. In particular, a material can be ionized to be able to be accelerated, wherein a PFG (plasma flood gun) can be provided between the ion source and the substrate to neutralize the“ion” beam.

[0072] The accelerator can be configured to accelerate the ions provided by the ion source to a predetermined energy for impact of the ions or the neutralized particles on the solid, such as the substrate 10 or the first material layer. As an example, the linear source, and particularly the accelerator, can be configured to provide the particles and/or the ions with an energy of at least 1 keV, specifically at least 10 keV, and more specifically at least 100 keV for impingement on the substrate 10 or the first material layer. In some embodiments, the linear source, and particularly the accelerator, can be configured to provide the particles and/or the ions with an energy in a range between 1 and 1000 keV, specifically between 1 and 500 keV, and more specifically between 3 and 300 keV.

[0073] In some implementations, an accelerator includes one or more lenses. The one or more lenses can be selected from the group consisting of electrostatic lenses, magnetic lenses, and electromagnetic lenses. The one or more lenses can be configured for at least one of accelerating the ions towards the substrate/first material layer and focusing the ion beam onto the substrate/first material layer. Optionally, the ions can be neutralized after acceleration and an optional focusing for implantation of electrically neutral particles in the substrate or the first material layer.

[0074] Generally, as schematically shown in Fig. 13, a width of the deposition chamber 556 in a dimension parallel to the substrate can be significantly greater than the width of the substrate 10 in a horizontal direction. This is also shown in Fig. 11 and Fig. 12. In Fig. 11, the deposition chamber is positioned, with respect to the adjacent further vacuum chamber 570D, to yield an L- shaped vacuum processing apparatus 550D. It is understood that a deposition chamber with a linear source and a large width can be employed in other configurations as well, for example in an apparatus having two or more such deposition chambers with linear sources. The extended width of the deposition chamber as in Fig. 13 allows to move the substrate 10 along the linear source 130 while enabling that any section of the substrate surface is effected by the beam 134 of the linear source during the process.

[0075] An embodiment showing a different setup to the L-shape of the vacuum processing apparatus 550D of Fig. 11 is shown in Fig. 12, where the deposition chamber 556 is provided to yield a T-shape together with the adjacent further vacuum chamber 570D. Generally, the substrate may be moved along the linear source in a number of ways. For example, a spindle may be provided at the axis about which the support turns. By doing so, the substrate may be moved by activating the spindle, so that the substrate can pass through the entire width of the L-shape or T-shape section. [0076] According to some embodiments, which can be combined with other embodiments described herein, the substrate can be moved during an operation of the linear source with respect to a direction perpendicular to the longitudinal axis of the linear source. For example, a linear source may be switched on, the substrate may be moved back and forth for processing the substrate. In a L-shaped chamber, the substrate may be moved once or several times past the linear source, i.e. from one end of the substrate to an opposing end of the substrate. For a T-shaped chamber, the substrate may be moved once or several times from approximately the center of the substrate past the linear source to one end of the substrate and back to approximately the center. Afterwards, the substrate may be moved once or several times from approximately the center of the substrate past the linear source to an opposing end of the substrate and back to approximately the center. Movements may be similarly provided for chamber shapes being not entirely T-shaped and not entirely L-shaped, i.e. having a protrusion which is longer one side as compared to the opposing side.

[0077] In embodiments as shown in Fig. 11 and Fig. 12, typically no carrier for the substrate 10 is needed, except the carrier provided in the transfer chamber. As was described previously with respect to, e.g., Fig. 7 and Fig. 8, the substrate is moved from a non-vertical position (“flip”) to a non-horizontal position, typically a substantially vertical position, prior to the processing in the deposition chamber 556.

[0078] In Fig. 14, the linear source 130 is configured as a PLD source (pulsed laser deposition). In pulsed laser deposition (PLD), a high-powered pulsed laser beam is focused e.g. inside the vacuum chamber to strike a target of the material that is to be deposited. The material is ablated or vaporized from the target, and the resulting plasma plume is deposited as a thin film on the substrate.

[0079] A deposition source according to some embodiments may be a pulsed laser deposition source (PLD source). With the PLD source, according to some embodiments, the substrate or a first material layer on the substrate 10 are processed by using a pulsed laser beam, which is directed onto a target. The substrate is moved through a processing region along a transportation path. The pulsed laser deposition source includes a laser 131. In embodiments, the laser may be an Excimer laser. The laser beam is directed onto a target. The target may be stationary, or may optionally include a rotating cylinder comprising the target material. The laser is either directed or scanned onto the stationary target which has a surface area, or the laser may also be dynamically and continuously deflected to incrementally scan at least a part of the surface area of the stationary target.

[0080] The pulsed plasma deposition source may be provided in a processing region with respect to a substrate provided on a transportation path. Particles may also be provided by a pulsed plasma deposition source while the pulsed plasma deposition source is moved, e.g., when a substrate having a large area treated with a PLD source having a particle beam much smaller than the substrate.

[0081] Generally, the substrate may be moving along the transportation path or may be stationary on the transportation path, while the substrate or the first material layer is irradiated with the particles from the PLD source.

[0082] According to one embodiment, a vacuum processing apparatus for processing a substrate is provided. The vacuum processing apparatus includes a vacuum chamber, a substrate support within the vacuum chamber, and at least two processing stations adjacent to the vacuum chamber and operationally coupled to the vacuum chamber, wherein a surface of a substrate has different orientations when the substrate is treated in different processing stations, The substrate support includes a support body for holding a substrate and an actuator configured for moving the support body around an axis in front of the processing station, wherein a substrate held by the support body is movable from a non-vertical position to a non-horizontal position and vice-versa, by a movement about said axis. At least one of the processing stations comprises a linear source with a longitudinal axis, for treating the substrate.

[0083] Particularly, the vacuum processing apparatus may be configured such that the substrate is shifted, during an operation of the linear source, with respect to a direction perpendicular to the longitudinal axis of the linear source, and wherein the beam from the linear source is configured to irradiate a fraction of the surface having the shape of a stripe or elongated square, so that the shift leads to a consecutive treatment of the whole surface. According to further additional or alternative modifications, the processing station has at least one inner dimension which is at least double as large as a width of the substrate, to enable coverage of the whole substrate surface during a shifting process. Yet further, additionally or alternatively, the vacuum processing apparatus may include a load module.

[0084] A substrate processing system may be provided and, optionally, in combination with other embodiments described herein, wherein more than one vacuum processing apparatus is arranged at a vacuum transfer chamber, optionally with the vacuum transfer chamber as a center of the processing apparatuses. The vacuum transfer chamber may have a polygonal or a circular shape.

[0085] According to some embodiments, a method for processing a substrate is provided. The method includes optionally providing an apparatus according to any of the embodiments described herein. The method includes providing a substrate on the support in the vacuum chamber, moving the substrate, by the support, from a non vertical position to a non-horizontal position, and moving the support to the processing chamber, treating the surface of the substrate by a beam from the linear source, and shifting the substrate in parallel along the linear source.

[0086] According to one or more modifications, which may additionally or alternatively provided, a treating may include at least one of a pre-treatment; a cleaning; an implantation; and a deposition of a layer of a material. Further, the substrate may be treated in at least two of the processing chambers, and is transferred via the support from the first treatment in a first processing station to a second treatment in a second processing station, particularly wherein the substrate changes, in the process, the orientation of the substrate from non-horizontal in the first processing chamber, to non vertical in the transfer chamber, to non-horizontal in the second processing chamber. According to yet further embodiments, which can be combined with other embodiments described herein, the linear source may include a rotatable target, over which a pulsed laser beam is rasterized in order to ablate material for a deposition on the substrate.

[0087] The present disclosure has several advantages including providing a substrate support for holding a substrate on the back surface with no need for other holding arrangements affecting the front or lateral surfaces of the substrate. The substrate support described herein enables a substrate processing in a non-horizontal position with no side deposition or other holding arrangements reaching around the glass edge. Due to the dry adhesive structures described herein, sagging can be avoided. Embodiments of the vacuum processing system described herein enable a non-vertical substrate processing and a space-saving design with a small footprint.

[0088] While the foregoing is directed to some embodiments, other and further embodiments may be devised without departing from the basic scope, and the scope is determined by the claims that follow.