Title:
VANADIUM SILICON CARBONITRIDE FILM, VANADIUM SILICON CARBONITRIDE-COVERED MEMBER AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/035397
Kind Code:
A1
Abstract:
This vanadium silicon carbonitride film comprises vanadium, silicon, carbon, and nitrogen. When vanadium element concentration (vanadium element concentration + silicon element concentration + carbon element concentration + nitrogen element concentration) in the film is defined as "a," and silicon element concentration (vanadium element concentration + silicon element concentration + carbon element concentration + nitrogen element concentration) in the film is defined as "b," 0.30 ≤ a/b ≤ 1.3 and 0.30 ≤ a + b ≤ 0.70 are satisfied, and the sum of the vanadium element concentration, silicon element concentration, carbon element concentration, and nitrogen element concentration in the film is 90 [at%] or greater.
Inventors:
HABUKA SATORU (JP)
MATSUOKA HIROYUKI (JP)
SAKAKIBARA WATARU (JP)
MATSUOKA HIROYUKI (JP)
SAKAKIBARA WATARU (JP)
Application Number:
PCT/JP2018/029716
Publication Date:
February 21, 2019
Filing Date:
August 08, 2018
Export Citation:
Assignee:
DOWA THERMOTECH CO LTD (JP)
International Classes:
C23C16/36; B21D37/01; B21D37/20; B23B27/14; B23F21/00; C23C16/34; C23C16/50
Domestic Patent References:
| WO2010150411A1 | 2010-12-29 | |||
| WO2018124279A1 | 2018-07-05 |
Foreign References:
| JP2002371352A | 2002-12-26 | |||
| JP2006093550A | 2006-04-06 | |||
| JP2016204202A | 2016-12-08 |
Attorney, Agent or Firm:
HAGIWARA, Yasushi et al. (JP)
Download PDF:
Previous Patent: RF TAG AND RF TAG DEVICE
Next Patent: OPTICAL FILM, POLARIZING PLATE, AND IMAGE DISPLAY DEVICE
Next Patent: OPTICAL FILM, POLARIZING PLATE, AND IMAGE DISPLAY DEVICE