Title:
VAPOR-PHASE GROWTH APPARATUS AND METHOD FOR PRODUCTION OF EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2018/042876
Kind Code:
A1
Abstract:
The vapor-phase growth apparatus 1 according to the present invention is provided with: a reaction furnace 2; an introduction passage 8; multiple flow channels 15a; a branch channel 14a; and divided passages 16b. The reaction furnace 2 uses a gas material to vapor-grow an epitaxial layer on a substrate W. The introduction passage 8 has: an entrance 8a leading into the reaction furnace 2; an exit 8b which is disposed above the entrance 8a and closer to the reaction furnace 2 side as compared with the entrance 8a, and which reaches the reaction furnace 2; and a stepped part 8c disposed within the introduction passage 8. The multiple flow channels 15a are provided in a number equal to or greater than 32, and configured to extend from the entrance 8a to the outside the entrance 8a. The branch channel 14a causes the multiple flow channels 15a to converge in a knockout tournament draw pattern from the entrance 8a side downstream toward the direction of the gas material. The divided passages 16b are formed by dividing the introduction passage 8 so as to correspond to the multiple flow channels 15a, and are configured to be connected to the respective flow channels 15a. This configuration provides a vapor-phase growth apparatus that enables improvement of the uniformity in film thickness of an epitaxial layer to be grown on a substrate.
Inventors:
OHNISHI MASATO (JP)
MASUMURA HISASHI (JP)
MASUMURA HISASHI (JP)
Application Number:
PCT/JP2017/024821
Publication Date:
March 08, 2018
Filing Date:
July 06, 2017
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/205; C23C16/455
Foreign References:
| JP2011249448A | 2011-12-08 | |||
| JP2005183511A | 2005-07-07 | |||
| JP2000068215A | 2000-03-03 | |||
| JP2002075692A | 2002-03-15 |
Attorney, Agent or Firm:
HARIKAWA, Takashi (JP)
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