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Title:
VAPOR PHASE GROWTH APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/097456
Kind Code:
A1
Abstract:
A vapor phase growth apparatus according to an embodiment of the present invention comprises: a reaction chamber; a holder which is provided in the reaction chamber and in which a substrate is placed; a first heater provided in the reaction chamber and positioned below the holder; and a second heater provided in the reaction chamber and positioned above the holder. The holder includes: an inner region; an annular outer region that surrounds the inner region, and that surrounds the substrate when the substrate is placed; and a support part that is provided on the inner region, that can support a lower surface of the substrate, that is annular, and that has an arc portion. The distance between an outer circumferential end of the arc portion and an inner circumferential end of the outer region is 6 mm or less. The width of the support part is 3 mm or more. When the substrate is placed in the holder such that the center of the substrate and the center of the holder coincide, if the radius of the substrate is defined as R1, the radius of the outer circumferential end of the arc portion as R4, and the distance between the outer circumferential end of the substrate and the inner circumferential end of the outer region opposed to the arc portion as D1, formula 1 is satisfied. (Formula 1): R1-D1>R4

Inventors:
DAIGO YOSHIAKI (JP)
MORIYAMA YOSHIKAZU (JP)
Application Number:
PCT/JP2021/038355
Publication Date:
May 12, 2022
Filing Date:
October 18, 2021
Export Citation:
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Assignee:
NUFLARE TECHNOLOGY INC (JP)
International Classes:
H01L21/205; C23C16/458; C23C16/46
Domestic Patent References:
WO2019044440A12019-03-07
WO2009060912A12009-05-14
Foreign References:
JP2018037537A2018-03-08
JP2018082100A2018-05-24
JPH0963966A1997-03-07
JP2018073886A2018-05-10
US20020083896A12002-07-04
JP2018037537A2018-03-08
Attorney, Agent or Firm:
IKEGAMI, Tetsuma et al. (JP)
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