Title:
VAPOR-PHASE GROWTH DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/135422
Kind Code:
A1
Abstract:
The objective of the present technique is to provide a vapor-phase growth device with which it is possible to observe in situ the state of a semiconductor layer with high precision. A vapor-phase growth device (1000) has a susceptor (210), a reaction chamber (100), a starting material gas introduction opening (310), a gas discharge opening (320), a light emission unit (510) that irradiates electromagnetic waves toward the susceptor (210), and a light reception unit (520) that receives the electromagnetic waves. The angle formed by the plate surface of a substrate (S1) and a line connecting the starting material gas introduction opening (310) with the gas discharge opening (320) is -20° to 20°. The reaction chamber (100) has a reaction chamber top plate (101) that faces the susceptor (210). The reaction chamber top plate (101) has a through-hole (101a). The light emission unit (510) irradiates the electromagnetic waves through the through-hole (101a) toward the susceptor (210). The light reception unit (520) receives the electromagnetic waves that have passed through the through-hole (101a).
Inventors:
NAGAMATSU KENTARO (JP)
HONDA YOSHIO (JP)
AMANO HIROSHI (JP)
TABUCHI TOSHIYA (JP)
HONDA YOSHIO (JP)
AMANO HIROSHI (JP)
TABUCHI TOSHIYA (JP)
Application Number:
PCT/JP2018/000767
Publication Date:
July 26, 2018
Filing Date:
January 15, 2018
Export Citation:
Assignee:
UNIV NAGOYA NAT UNIV CORP (JP)
TAIYO NIPPON SANSO CORP (JP)
TAIYO NIPPON SANSO CORP (JP)
International Classes:
H01L21/205; C23C16/52; H01L21/66
Domestic Patent References:
| WO2008023697A1 | 2008-02-28 |
Foreign References:
| JPH01129411A | 1989-05-22 | |||
| JP2010010440A | 2010-01-14 | |||
| JP2016186960A | 2016-10-27 | |||
| JPH04170390A | 1992-06-18 | |||
| JP2012018985A | 2012-01-26 | |||
| JP2006303152A | 2006-11-02 | |||
| JPH11330187A | 1999-11-30 | |||
| JPH03220717A | 1991-09-27 | |||
| US20110143016A1 | 2011-06-16 |
Attorney, Agent or Firm:
FUJITANI Osamu et al. (JP)
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