Title:
VARIABLE CAPACITOR AND ITS MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2003/054972
Kind Code:
A1
Abstract:
A variable capacitor having a semiconductor layer formed over a substrate with a buried oxide film interposed therebetween. In the semiconductor layer, an n−region (132) containing an n−type dopant and formed in a ring shape, an anode (133) formed in a ring shape, joined to the periphery of the n−region (132), and containing a p−type dopant, and a cathode (131) joined to the inner periphery of the n−region (132) and containing a n−type dopant are formed. The dopant concentration of the n−region (132) is lower than those of the anode (133) and cathode (131).
Inventors:
ASAI AKIRA (JP)
OHNISHI TERUHITO (JP)
OHNISHI TERUHITO (JP)
Application Number:
PCT/JP2002/012949
Publication Date:
July 03, 2003
Filing Date:
December 11, 2002
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
ASAI AKIRA (JP)
OHNISHI TERUHITO (JP)
ASAI AKIRA (JP)
OHNISHI TERUHITO (JP)
International Classes:
H01L21/329; H01L21/84; H01L27/12; H01L29/93; (IPC1-7): H01L29/93; H01L27/06; H01L29/786
Foreign References:
| JPS58186973A | 1983-11-01 | |||
| JPS61294874A | 1986-12-25 | |||
| JPH01318266A | 1989-12-22 | |||
| GB2105106A | 1983-03-16 | |||
| US5962897A | 1999-10-05 | |||
| JPH09289323A | 1997-11-04 |
Other References:
KEQIANG SHEN ET AL.: "A three-terminal SOI gated varactor for RF applications", IEEE TRANSACTIONS ON ELECTRORN DEVICES48, vol. 2, February 2001 (2001-02-01), pages 289 - 293, XP001038977
Attorney, Agent or Firm:
Saegusa, Eiji (1-7-1 Doshomachi, Chuo-k, Osaka-shi Osaka, JP)
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