Title:
VARIABLE GAIN AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2018/047213
Kind Code:
A1
Abstract:
We introduce a single-ended amplifying circuit with gain continuously adjustable between positive and negative values. It can be implemented with 4 standard transistors or with 2-conduction-mechanism devices. We achieved a 3-fold reduction in the number of components respect to standard implementation, which is particularly important in neuromorphic applications.
Inventors:
INOUE ISAO (JP)
STOLIAR PABLO ALBERTO (JP)
SCHULMAN ALEJANDRO RAUL (JP)
STOLIAR PABLO ALBERTO (JP)
SCHULMAN ALEJANDRO RAUL (JP)
Application Number:
PCT/JP2016/004120
Publication Date:
March 15, 2018
Filing Date:
September 09, 2016
Export Citation:
Assignee:
AIST (JP)
International Classes:
H03G1/00; G06N3/063
Foreign References:
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| US3946327A | 1976-03-23 | |||
| US2776343A | 1957-01-01 | |||
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| US3702444A | 1972-11-07 | |||
| US5581213A | 1996-12-03 | |||
| US4563670A | 1986-01-07 | |||
| US5198780A | 1993-03-30 | |||
| US3451006A | 1969-06-17 | |||
| US5394511A | 1995-02-28 | |||
| US4950917A | 1990-08-21 | |||
| US5021693A | 1991-06-04 |
Other References:
ZHENXING WANG ET AL: "Carbon Nanotube Based Multifunctional Ambipolar Transistors for AC Applications", ADVANCED FUNCTIONAL MATERIALS, WILEY - V C H VERLAG GMBH & CO. KGAA, DE, vol. 23, no. 4, 28 January 2013 (2013-01-28), pages 446 - 450, XP001581808, ISSN: 1616-301X, [retrieved on 20120911], DOI: DOI: 10.1002/ADFM.201202185
ARASH YAZDANPANAH GOHARRIZI ET AL: "Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 59, no. 12, 1 December 2012 (2012-12-01), pages 3527 - 3532, XP011472264, ISSN: 0018-9383, DOI: 10.1109/TED.2012.2218817
KUMAR, NEERAJ; AI KITOH; ISAO H. INOUE: "Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTi0 surface", SCIENTIFIC REPORTS, 2016, pages 6
BURKITT, ANTHONY N.: "A review of the integrate-and-fire neuron model: I. Homogeneous synaptic input", BIOLOGICAL CYBERNETICS, vol. 95.1, 2006, pages 1 - 19, XP019427236, DOI: doi:10.1007/s00422-006-0068-6
ARASH YAZDANPANAH GOHARRIZI ET AL: "Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 59, no. 12, 1 December 2012 (2012-12-01), pages 3527 - 3532, XP011472264, ISSN: 0018-9383, DOI: 10.1109/TED.2012.2218817
KUMAR, NEERAJ; AI KITOH; ISAO H. INOUE: "Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTi0 surface", SCIENTIFIC REPORTS, 2016, pages 6
BURKITT, ANTHONY N.: "A review of the integrate-and-fire neuron model: I. Homogeneous synaptic input", BIOLOGICAL CYBERNETICS, vol. 95.1, 2006, pages 1 - 19, XP019427236, DOI: doi:10.1007/s00422-006-0068-6
Attorney, Agent or Firm:
TANI & ABE, P.C. (JP)
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