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Title:
VARIABLE RESISTANCE ELEMENT, MANUFACTURING METHOD THEREFOR, AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/187032
Kind Code:
A1
Abstract:
A variable resistance element (1) comprises: a variable resistance layer (3) which can store and emit at least one type of ion, and the resistance of which changes in accordance with the amount of the at least one type of ion; an ion storage/emission layer (5) that can store and emit the at least one type of ion; and an ion conduction layer (4) that conducts the at least one type of ion between the variable resistance layer and the ion storage/emission layer. The variable resistance layer and the ion storage/emission layer have the same constituent elements.

Inventors:
KURITA, Tomochika (1-1 Kamikodanaka 4-chome, Nakahara-ku, Kawasaki-sh, Kanagawa 88, 〒2118588, JP)
NOSHIRO, Hideyuki (1-1 Kamikodanaka 4-chome, Nakahara-ku, Kawasaki-sh, Kanagawa 88, 〒2118588, JP)
SATO, Shintaro (1-1 Kamikodanaka 4-chome, Nakahara-ku, Kawasaki-sh, Kanagawa 88, 〒2118588, JP)
Application Number:
JP2018/013706
Publication Date:
October 03, 2019
Filing Date:
March 30, 2018
Export Citation:
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Assignee:
FUJITSU LIMITED (1-1 Kamikodanaka 4-chome, Nakahara-ku Kawasaki-sh, Kanagawa 88, 〒2118588, JP)
International Classes:
H01L21/8239; H01C13/00; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
WO2010038423A12010-04-08
Foreign References:
JP2009021431A2009-01-29
JP2017516293A2017-06-15
JP2017045611A2017-03-02
US20170133587A12017-05-11
US20170200888A12017-07-13
Attorney, Agent or Firm:
SANADA, Tamotsu et al. (NMF Kichijoji-honcho Bldg. 5th Floor, 10-31 Kichijoji-honcho 1-chome, Musashino-sh, Tokyo 04, 〒1800004, JP)
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