VARIABLY RESISTANT ELEMENT AND VARIABLY RESISTANT MEMORY DEVICE

WIPO Patent Application WO/2011/007538

A1

Disclosed is a variably resistant element (100) used in a memory device having a through-hole, cross-point structure. Further disclosed is a variably resistant memory device using same. The variably resistant element (100) is provided with a substrate (7), and an inter-layer insulating layer (3) formed on the substrate. A through-hole (4) is formed so as to penetrate the inter-layer insulating layer; a first variably resistant layer (2) configured from a transition metal oxide is formed outside the through-hole; a second variably resistant layer (5) configured from a transition metal oxide is formed inside the through-hole; the resistance of the first variably resistant layer and the second variably resistant layer are different; and the first variably resistant layer and the second variably resistant layer are formed so as to connect with one another only at the aperture (20) on the side that is towards the substrate of the through-hole.

ARITA KOJI
MIKAWA TAKUMI
HIMENO ATSUSHI
KAWASHIMA YOSHIO
TOMINAGA KENJI

PCT/JP2010/004498

January 20, 2011

July 12, 2010

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PANASONIC CORP (JP)
ARITA KOJI
MIKAWA TAKUMI
HIMENO ATSUSHI
KAWASHIMA YOSHIO
TOMINAGA KENJI

H01L27/10; H01L45/00; H01L49/00

WO2009050833A1	2009-04-23
WO2007102341A1	2007-09-13
WO2009081595A1	2009-07-02

JP2007287761A	2007-11-01
JP2008085071A	2008-04-10

PATENT CORPORATE BODY ARCO PATENT OFFICE (JP)
Patent business corporation Owner old patent firm (JP)

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