Title:
VERTICAL-CAVITY SURFACE-EMITTING LASER
Document Type and Number:
WIPO Patent Application WO/2017/212887
Kind Code:
A1
Abstract:
In this vertical-cavity surface-emitting laser (10), a semiconductor multilayer film (5) provided on a semiconductor substrate (11) is provided with a first DBR layer (13), an active layer (15), a current confinement layer (23), and a second DBR layer (24). The upper surface of an insulating layer (31) covering the side ends of the semiconductor multilayer film (5) is connected to the upper surface of the semiconductor multilayer film (5) and extends along the semiconductor substrate (11). The end surface (62) of the insulating layer (31) is connected to the upper surface (61) of the insulating layer (31) and extends toward the semiconductor substrate (11). First and second contact electrodes (26, 27) are electrically connected with each of the first DBR layer (13) and the upper surface of the semiconductor multilayer film (5). A bonding pad (33) is provided either directly on the semiconductor substrate (11) or with an insulating film (30) therebetween. Metal wiring (32) provided on the insulating layer (31) connects the second contact electrode (26) and the bonding pad (33).
Inventors:
MATSUBARA IPPEI (JP)
IWATA KEIJI (JP)
KABURAKI SHINJI (JP)
IWATA KEIJI (JP)
KABURAKI SHINJI (JP)
Application Number:
PCT/JP2017/018674
Publication Date:
December 14, 2017
Filing Date:
May 18, 2017
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H01S5/042; H01S5/183
Foreign References:
| JP2015099870A | 2015-05-28 | |||
| JP2007294741A | 2007-11-08 | |||
| JPH03263388A | 1991-11-22 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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