Title:
VERTICAL CHANNEL ORGANIC THIN-FILM TRANSISTOR, AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2018/176522
Kind Code:
A1
Abstract:
A vertical channel organic thin-film transistor, and manufacturing method thereof. The vertical channel organic thin-film transistor comprises: an annular organic semiconductor layer (3), annular drain (5) and annular source (2) in contact with an upper side and lower side of the organic semiconductor layer, respectively, and a gate (6) provided within an inner ring of the annular organic semiconductor layer and insulated and separated from the annular organic semiconductor layer. The length of an effective conductive channel of the thin-film transistor can be changed by modifying the width of the organic semiconductor layer fabricated by employing a solution method, such that defining a pattern of the short channel no longer relies on high-precision exposure and etching equipment, thus reducing manufacturing difficulties and costs. In addition, an annular electrode structure reduces a two-dimensional area of the thin-film transistor, and enhances applicability thereof in various scenarios, and enables high flexibility of circuit designs.
Inventors:
LIU ZHE (CN)
Application Number:
PCT/CN2017/081029
Publication Date:
October 04, 2018
Filing Date:
April 19, 2017
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L51/10; H01L51/05; H01L51/40
Foreign References:
| CN101593811A | 2009-12-02 | |||
| CN103022150A | 2013-04-03 | |||
| US6664576B1 | 2003-12-16 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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