VERTICAL SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SUCH DEVICES

Title:

VERTICAL SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SUCH DEVICES

Document Type and Number:

WIPO Patent Application WO2006025035

Kind Code:

A3

Abstract:

A vertical semiconductor device, for example a trench-gate MOSFET power transistor (1), has a drift region (12) of one conductivity type containing spaced vertical columns (30) of the opposite conductivity type for charge compensation increase of the device breakdown voltage. Insulating material (31) is provided on the sidewalls only of trenches (20) in the drift region (12) and the opposite conductivity type material is epitaxially grown from the bottom of the trenches (20). The presence of the sidewall insulating material (31) prevents any defects in the charge compensation columns crossing into the drain drift material which therefore prevents any excessive leakage currents in the device (1). The insulating material (31) also prevents epitaxial growth on the trench sidewalls and hence substantially prevents forming voids in the trenches which would lessen the accuracy of charge compensation. The epitaxial growth by this method can be well controlled and may be stopped at an upper level (21) below the top major surface (10a). Thus, for example,20 trench-gates 22, 23 may be formed in the same trenches (20) above the compensation columns (30).

Inventors:

ROCHEFORT CHRISTELLE (BE)
HIJZEN ERWIN A (BE)
MEUNIER-BEILLARD PHILIPPE (BE)

Application Number:

PCT/IB2005/052873

Publication Date:

August 24, 2006

Filing Date:

September 01, 2005

Export Citation:

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Assignee:

KONINKL PHILIPS ELECTRONICS NV (NL)
ROCHEFORT CHRISTELLE (BE)
HIJZEN ERWIN A (BE)
MEUNIER-BEILLARD PHILIPPE (BE)

International Classes:

H01L29/78; H01L21/336; H01L29/06; H01L21/205

Foreign References:

US5216275A	1993-06-01
US20040043565A1	2004-03-04

Other References:

KUROSAKI T ET AL: "200V multi RESURF trench MOSFET (MR TMOS)", PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2003), CAMBRIDGE, UK, 14 April 2003 (2003-04-14) - 17 April 2003 (2003-04-17), IEEE, NEW YORK, NEW YORK, USA, pages 211 - 214, XP010653761, ISBN: 0-7803-7876-8

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