Title:
VIBRATION SENSOR AND METHOD FOR MANUFACTURING THE VIBRATION SENSOR
Document Type and Number:
WIPO Patent Application WO/2008/044381
Kind Code:
A1
Abstract:
A protective film (20) of an SiO2 thin film is formed on a front surface
of an Si substrate (12), and a part of the protective film (20) is removed to form
an etching window (22). A sacrifice layer (23) of polycrystalline Si is formed
in the etching window (22). A protective film (24) of SiO2 is formed
on the front surface of the Si substrate (12) from the top of the sacrifice layer
(23), and a thin film (13) as an element formed of polycrystalline Si is further
formed on the protective film (24). A backside etching window (26) is opened in
a protective film (21) on the back side of the Si substrate (12). The Si substrate
(12) is soaked in TMAH to perform crystal anisotropic etching in the Si substrate
(12) through the backside etching window (26) to provide a through-hole (14)
in the Si substrate (12). When the sacrifice layer (23) is exposed to the interior
of the through-hole (14), the sacrifice layer (23) is etching-removed to provide
a gap (19) between the protective film (24) and the Si substrate (12) and crystal
anisotropic etching of the Si substrate (12) is carried out from its front side
and backside.
Inventors:
KASAI TAKASHI (JP)
HORIMOTO YASUHIRO (JP)
KATO FUMIHITO (JP)
MUNECHIKA MASAKI (JP)
WAKABAYASHI SHUICHI (JP)
TAKAHASHI TOSHIYUKI (JP)
INUGA MASAYUKI (JP)
HORIMOTO YASUHIRO (JP)
KATO FUMIHITO (JP)
MUNECHIKA MASAKI (JP)
WAKABAYASHI SHUICHI (JP)
TAKAHASHI TOSHIYUKI (JP)
INUGA MASAYUKI (JP)
Application Number:
PCT/JP2007/064368
Publication Date:
April 17, 2008
Filing Date:
July 20, 2007
Export Citation:
Assignee:
OMRON TATEISI ELECTRONICS CO (JP)
KASAI TAKASHI (JP)
HORIMOTO YASUHIRO (JP)
KATO FUMIHITO (JP)
MUNECHIKA MASAKI (JP)
WAKABAYASHI SHUICHI (JP)
TAKAHASHI TOSHIYUKI (JP)
INUGA MASAYUKI (JP)
KASAI TAKASHI (JP)
HORIMOTO YASUHIRO (JP)
KATO FUMIHITO (JP)
MUNECHIKA MASAKI (JP)
WAKABAYASHI SHUICHI (JP)
TAKAHASHI TOSHIYUKI (JP)
INUGA MASAYUKI (JP)
International Classes:
H01L21/306; H01L29/84; H04R19/04; H04R31/00
Foreign References:
| JP2006157863A | 2006-06-15 | |||
| JP2004356708A | 2004-12-16 | |||
| JP2002328117A | 2002-11-15 | |||
| JPH10181032A | 1998-07-07 | |||
| JPH01309384A | 1989-12-13 | |||
| JP2001519915A | 2001-10-23 | |||
| JPH09113390A | 1997-05-02 | |||
| JP2004506394A | 2004-02-26 | |||
| JP2003530717A | 2003-10-14 | |||
| JPH01309384A | 1989-12-13 | |||
| US5452268A | 1995-09-19 |
Other References:
J.H.JERMAN: "The fabrication and use of micromachined corrugated silicon diaphragms", SENSORS AND ACTUATORS, vol. A21-A23, 1992, pages 998 - 992
Attorney, Agent or Firm:
NAKANO, Masayoshi (3-5 Tanimachi 1-chome, Chuo-ku, Osaka-sh, Osaka 12, JP)
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