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Patent Searching and Data


Title:
VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY MAGNETIC RANDOM ACCESS MEMORY AND DETERMINING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/085617
Kind Code:
A1
Abstract:
Disclosed in the present invention is a voltage-controlled magnetic anisotropy magnetic random access memory. The voltage-controlled magnetic anisotropy magnetic random access memory comprises a virtual array, a storage array, and a peripheral circuit. The storage array comprises X rows and Y columns of storage units, the virtual array comprises X rows and single column of virtual units, and the peripheral circuit comprises at least one data sampling-determining-outputting circuit. The data sampling-determining-outputting circuit comprises a sensitive amplifier circuit and a logical circuit that are connected in series, and the virtual array and the storage array are connected to the data sampling-determining-outputting circuit in the peripheral circuit at the same time. In the present invention, by adding the virtual array and changing the value of a width-length ratio between two differential circuits in the sensitive amplifier circuit, the problem of failure to determine the storage state of the voltage-controlled magnetic anisotropy magnetic random access memory is effectively resolved, and resistance value deviation risks in different technological conditions can also be avoided.

Inventors:
SHEN, Ling (TANG, ChenchenNo.497, Gaosi Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 0, 201210, CN)
JIANG, Yu (TANG, ChenchenNo.497, Gaosi Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 0, 201210, CN)
YAN, Huijie (TANG, ChenchenNo.497, Gaosi Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 0, 201210, CN)
WEN, Jianxin (TANG, ChenchenNo.497, Gaosi Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 0, 201210, CN)
Application Number:
CN2018/102889
Publication Date:
May 09, 2019
Filing Date:
October 25, 2018
Export Citation:
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Assignee:
SHANGHAI IC R & D CENTER CO., LTD. (TANG, ChenchenNo.497, Gaosi Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 0, 201210, CN)
International Classes:
G11C11/16
Foreign References:
CN107767907A2018-03-06
CN106558333A2017-04-05
CN107251145A2017-10-13
US20140071732A12014-03-13
Other References:
ZHAO WEISHENG ET AL: "Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM)", SCIENTIA SINICA PHYSICA, MECHANICA & ASTRONOMICA, vol. 46, no. 10, 31 December 2016 (2016-12-31), pages 107306-1 - 107306-21, XP055607561
Attorney, Agent or Firm:
SHANGHAI TIANCHEN INTELLECTUAL PROPERTY AGENCY (CAO Ting, 3302 Tower 1 No. 388 Zhongjiang Road, Putuo, Shanghai, Shanghai 2, 200062, CN)
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