Title:
A VOLTAGE LIMITING SEMICONDUCTOR PASS GATE CIRCUIT
Document Type and Number:
WIPO Patent Application WO2003063198
Kind Code:
A3
Abstract:
A voltage limiting semiconductor pass gate circuit (15), comprises a first transistor (16), operatively connected to an input node (10) and an output node (11) of the pass gate circuit (15), and a second transistor (17), operatively connected between the input node (10) and the output node (11). The second transistor (17) has a control electrode biased to a supply voltage (6), and the first transistor (16) has a control electrode which connects by two back-to-back connected diode elements (18, 19) to the control electrode of the second transistor (17). The pass gate circuit (15) is typically applied in input I/O cells (14) of semiconductor integrated circuits (13).
Inventors:
MANDAL PRADIP (NL)
Application Number:
PCT/IB2002/005484
Publication Date:
April 08, 2004
Filing Date:
December 12, 2002
Export Citation:
Assignee:
KONINKL PHILIPS ELECTRONICS NV (NL)
MANDAL PRADIP (NL)
MANDAL PRADIP (NL)
International Classes:
H03K5/08; H03F3/72; H03K17/06; H03K17/687; (IPC1-7): H03K17/06
Foreign References:
| JPS60177714A | 1985-09-11 | |||
| US6271703B1 | 2001-08-07 |
Download PDF:
Previous Patent: CONTROL ELEMENT BASED ON A MEMBRANE SWITCH
Next Patent: APPARATUS AND METHOD FOR ETCHING THE EDGES OF SEMICONDUCTOR WAFERS
Next Patent: APPARATUS AND METHOD FOR ETCHING THE EDGES OF SEMICONDUCTOR WAFERS