Title:
VOX GATING TUBE-BASED PHASE CHANGE STORAGE UNIT
Document Type and Number:
WIPO Patent Application WO/2018/205915
Kind Code:
A1
Abstract:
Disclosed by the present invention is a VOx gating tube-based phase change storage unit, comprising a lower electrode layer, a VOx gating layer, a phase change function layer and an upper electrode layer. The present invention uses VOx to achieve the gating of the phase change function layer, and may achieve data storage on the basis of the gating of the phase change function layer. A state switch of the VOx may be controlled by means of applying voltage thereto, which may achieve the goal of the phase change storage unit being in a non-gated state at low voltage and in a gated state at high voltage. The present invention may effectively reduce a drain current of a phase change memory array by means of switch control of the VOx, and provide a sufficiently high Reset current; additionally, the present invention does not require high-temperature processing conditions, simplifies the process of preparing a phase change memory, reduces costs, and increases the possibility for the commercialization of highly integrated phase change memories.
Inventors:
MIAO XIANGSHUI (CN)
TONG HAO (CN)
MA LIFAN (CN)
TONG HAO (CN)
MA LIFAN (CN)
Application Number:
PCT/CN2018/085935
Publication Date:
November 15, 2018
Filing Date:
May 08, 2018
Export Citation:
Assignee:
UNIV HUAZHONG SCIENCE TECH (CN)
International Classes:
H01L45/00
Foreign References:
| CN102610749A | 2012-07-25 | |||
| CN106992251A | 2017-07-28 | |||
| US8830741B1 | 2014-09-09 | |||
| US7626860B2 | 2009-12-01 |
Attorney, Agent or Firm:
HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY PATENT AGENCY CENTER (CN)
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