Title:
WAFER AREA PRESSURE CONTROL FOR PLASMA CONFINEMENT
Document Type and Number:
WIPO Patent Application WO2002029848
Kind Code:
A3
Abstract:
A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100 %. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
Inventors:
TAEJOON HAN (US)
BENZING DAVID W (US)
ELLINGBOE ALBERT R (IE)
BENZING DAVID W (US)
ELLINGBOE ALBERT R (IE)
Application Number:
PCT/US2001/042332
Publication Date:
October 31, 2002
Filing Date:
September 26, 2001
Export Citation:
Assignee:
LAM REASEARCH CORP (US)
TAEJOON HAN (US)
BENZING DAVID W (US)
ELLINGBOE ALBERT R (IE)
TAEJOON HAN (US)
BENZING DAVID W (US)
ELLINGBOE ALBERT R (IE)
International Classes:
H05H1/46; B01J3/00; B01J3/02; B01J19/08; C23F4/00; H01J37/32; H01L21/3065; (IPC1-7): H01J37/32
Domestic Patent References:
| WO2001050498A1 | 2001-07-12 |
Foreign References:
| US6019060A | 2000-02-01 |
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