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Title:
WAFER AND WAFER DEFECT ANALYSIS METHOD
Document Type and Number:
WIPO Patent Application WO/2017/003203
Kind Code:
A1
Abstract:
A wafer defect analysis method according to one embodiment comprises the steps of: thermally treating a wafer at different temperatures; measuring an oxygen precipitate size of the thermally treated wafer; determining a characteristic temperature at which the oxygen precipitate size is maximized; and determining the type of defective region of the wafer, according to the determined characteristic temperature.

Inventors:
LEE JAE HYEONG (KR)
Application Number:
PCT/KR2016/007010
Publication Date:
January 05, 2017
Filing Date:
June 30, 2016
Export Citation:
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Assignee:
LG SILTRON INC (KR)
International Classes:
H01L21/02; H01L21/324; H01L21/66; H01L21/67
Foreign References:
KR20100123603A2010-11-24
KR20030040952A2003-05-23
US20130045583A12013-02-21
US20140361408A12014-12-11
JP4699675B22011-06-15
Attorney, Agent or Firm:
PARK, Young Bok et al. (KR)
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