Title:
WAFER DEFECT ANALYZING APPARATUS, ION ABSTRACTION APPARATUS FOR SAME, AND WAFER DEFECT ANALYZING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2010/095847
Kind Code:
A2
Abstract:
The present invention provides a wafer defect analyzing apparatus which performs an ion decoration on the defect portion of a wafer to analyze defects on the surface of the wafer, wherein the apparatus separates a decoration work and an ion abstraction work from each other, and permits the electrolyte from which the ion is abstracted to circulate, thus simplifying the process of decoration which otherwise might require inconvenient work and a long period of working time, and remarkably shortening the time taken for the whole decoration process. This leads to a shortening of the time taken for analyzing the defects of the wafer and to an improvement in the efficiency of defect analysis. The present invention also provides an ion extraction device for the apparatus, and a wafer defect analyzing method using the apparatus. Further, the present invention provides a wafer defect analyzing apparatus which improves the activity of ions during ion abstraction for decoration, thereby significantly shortening the time taken for ion abstraction, and also provides an ion abstraction apparatus for same and a wafer defect analyzing method using same.
Inventors:
HAN, Ho (580-10, I-dongAnsan-si, Gyeonggi-do 426-857, 426-857, KR)
Application Number:
KR2010/000973
Publication Date:
August 26, 2010
Filing Date:
February 17, 2010
Export Citation:
Assignee:
HANSMACHINE INC (104-3Na, Sihwa Indutrial Complex1269-13, Jungwang-1dong, Siheung-si, Gyeonggi-do 429-932, 429-932, KR)
주식회사 한스머신 (경기도 시흥시 정왕1동 1269-13 시화공단 3나 104, 429-932 Gyeonggi-do, 429-932, KR)
주식회사 한스머신 (경기도 시흥시 정왕1동 1269-13 시화공단 3나 104, 429-932 Gyeonggi-do, 429-932, KR)
International Classes:
H01L21/66
Attorney, Agent or Firm:
HUR, Dong Jin (#302, 3th Fl. 3M Bldg,1506-36 Seocho-dong, Seocho-gu, Seoul 137-070, 137-070, KR)
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