Title:
WAFER ETCHING DEVICE AND WAFER ETCHING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2013/100341
Kind Code:
A1
Abstract:
Disclosed are a wafer etching device for dry etching an Si wafer at high speeds and a wafer etching method using the same, wherein a capacitively coupled plasma unit or an inductively coupled plasma unit and a remote plasma unit are simultaneously mounted so as to etch a wafer at high speeds, thereby significantly reducing the operating time for etching a wafer. In addition, the top surface of a chuck is roughened so as to have an uneven surface such that micro spaces are formed between the top surface and the wafer and helium gas is supplied as a cooling gas via the micro spaces to cool the wafer, thereby preventing generation of plasma from undesired micro spaces generated by grooves and damage to the wafer from unnecessary plasma.
Inventors:
YOU KI-YONG (KR)
PARK SAENG-MAN (KR)
KIM YOUNG-JOON (KR)
PARK JIN-HYUN (KR)
OH SEUNG-BAE (KR)
PARK SAENG-MAN (KR)
KIM YOUNG-JOON (KR)
PARK JIN-HYUN (KR)
OH SEUNG-BAE (KR)
Application Number:
PCT/KR2012/008719
Publication Date:
July 04, 2013
Filing Date:
October 23, 2012
Export Citation:
Assignee:
RORZE SYSTEMS CORP (KR)
YOU KI-YONG (KR)
PARK SAENG-MAN (KR)
KIM YOUNG-JOON (KR)
PARK JIN-HYUN (KR)
OH SEUNG-BAE (KR)
YOU KI-YONG (KR)
PARK SAENG-MAN (KR)
KIM YOUNG-JOON (KR)
PARK JIN-HYUN (KR)
OH SEUNG-BAE (KR)
International Classes:
H01L21/3065
Foreign References:
| KR20070099854A | 2007-10-10 | |||
| US20060042752A1 | 2006-03-02 | |||
| KR20070079870A | 2007-08-08 |
Attorney, Agent or Firm:
KIM, Choong-Seok et al. (KR)
김충석 (KR)
김충석 (KR)
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Claims: