Title:
WAFER-LEVEL COATED COPPER STUD BUMPS
Document Type and Number:
WIPO Patent Application WO2003079407
Kind Code:
A3
Abstract:
A method for forming a semiconductor die package is disclosed. In one embodiment, the method includes forming a semiconductor die comprising a semiconductor device. A plurality of copper bumps is formed on the semiconductor die using a plating process. An adhesion layer is formed on each of the copper bumps, and a noble metal layer is formed on each of the copper bumps.
Inventors:
JOSHI RAJEEV (US)
TANGPUZ CONSUELO (PH)
CRUZ ERWIN VICTOR R (PH)
TANGPUZ CONSUELO (PH)
CRUZ ERWIN VICTOR R (PH)
Application Number:
PCT/US2003/007421
Publication Date:
July 01, 2004
Filing Date:
March 10, 2003
Export Citation:
Assignee:
FAIRCHILD SEMICONDUCTOR (US)
JOSHI RAJEEV (US)
TANGPUZ CONSUELO (PH)
CRUZ ERWIN VICTOR R (PH)
JOSHI RAJEEV (US)
TANGPUZ CONSUELO (PH)
CRUZ ERWIN VICTOR R (PH)
International Classes:
H01L21/60; H01L23/485; H01L29/78; (IPC1-7): H01L21/44; H01L21/302; H01L21/31; H01L21/461; H01L21/469
Foreign References:
| US6250541B1 | 2001-06-26 | |||
| US20020121692A1 | 2002-09-05 | |||
| US5895231A | 1999-04-20 | |||
| US5977783A | 1999-11-02 |
Download PDF: