Title:
WAFER LEVEL LIGHT-EMITTING DIODE ARRAY AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2014/025195
Kind Code:
A1
Abstract:
Disclosed are a wafer level light-emitting diode array and a method for manufacturing same. The light-emitting diode array includes: a growth substrate; a plurality of light-emitting diodes aligned on the substrate, wherein each of the plurality of light-emitting diodes includes a first semiconductor layer, an active layer, and a second semiconductor layer; and a plurality of upper electrodes aligned on the plurality of light-emitting diodes and formed of the same material as each other, wherein the plurality of upper electrodes are electrically connected to the first semiconductor layer of the corresponding light-emitting diode. Also, at least one of the upper electrodes is electrically connected to the second semiconductor layer of the light-emitting diode adjacent thereto, and the other one of the upper electrodes is insulated from the second semiconductor layer of the light-emitting diode adjacent thereto. Thus, provided is a light-emitting diode array that is capable of operating at a high voltage and has a simplified manufacturing process.
Inventors:
JANG JONG MIN (KR)
CHAE JONG HYEON (KR)
LEE JOON SUP (KR)
SUH DAE WOONG (KR)
ROH WON YOUNG (KR)
KANG MIN WOO (KR)
KIM HYUN A (KR)
CHAE JONG HYEON (KR)
LEE JOON SUP (KR)
SUH DAE WOONG (KR)
ROH WON YOUNG (KR)
KANG MIN WOO (KR)
KIM HYUN A (KR)
Application Number:
PCT/KR2013/007091
Publication Date:
February 13, 2014
Filing Date:
August 06, 2013
Export Citation:
Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L33/36
Foreign References:
| US7009199B2 | 2006-03-07 | |||
| JP2002009331A | 2002-01-11 | |||
| KR20110067313A | 2011-06-22 | |||
| JP2001156331A | 2001-06-08 | |||
| JP2000323750A | 2000-11-24 |
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (KR)
특허법인에이아이피 (KR)
특허법인에이아이피 (KR)
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