Title:
WAFER MACHINING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/176715
Kind Code:
A1
Abstract:
Provided is a wafer machining method that is capable of dividing, accurately, assuredly, and efficiently, a wafer that includes a laminate of a Low-k film, TEG, etc., in a device layer formed on the surface of a substrate, along a planned division line without reducing productivity. This method comprises: a modified region forming step for forming modified regions 20 along the planned division line inside a substrate of a wafer 10 by irradiating the wafer 10 with a laser beam L with the light-condensing-point set inside the substrate; and a breaking step for pressing a break bar against the wafer 10 from the rear surface 10b thereof along the planned division line to warp the wafer 10, and causing cracks generated from the modified regions 20 to extend to the device layer, thereby breaking the wafer 10, wherein, in the modified region forming step, a plurality of the modified regions 20 are formed in the thickness direction of the wafer 10 so that a plurality of unmodified regions 24 exist in the thickness direction of the wafer 10.
Inventors:
KATAOKA RYOSUKE (JP)
TAMOGAMI TAKASHI (JP)
OSHIDA SYUHEI (JP)
FUJITA TAKASHI (JP)
TAMOGAMI TAKASHI (JP)
OSHIDA SYUHEI (JP)
FUJITA TAKASHI (JP)
Application Number:
PCT/JP2019/009058
Publication Date:
September 19, 2019
Filing Date:
March 07, 2019
Export Citation:
Assignee:
TOKYO SEIMITSU CO LTD (JP)
International Classes:
H01L21/301; B23K26/53; B28D5/00; H01L21/304
Foreign References:
| JP2007013056A | 2007-01-18 | |||
| US20070155131A1 | 2007-07-05 | |||
| JP2007235069A | 2007-09-13 |
Attorney, Agent or Firm:
MATSUURA, Kenzo (JP)
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