Title:
WAFER AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/004160
Kind Code:
A1
Abstract:
An embodiment provides a wafer having an A mode defect, a B mode defect, a C mode defect, and a C+ mode defect, which are respectively less than 1% in a time zero dielectric breakdown (TZDB) evaluation, wherein the A mode defect has a TZDB value of 0 to 4 mega volt/cm, the B mode defect has a TZDB value of 4 to 8 mega volt/cm, the C mode defect has a TZDB value of 8 to 10 mega volt/cm, and the C+ mode has a TZDB value of 10 to 12 mega volt/cm.
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Inventors:
LEE WOO SUNG (KR)
KIM JA YOUNG (KR)
SHIN JUNG WON (KR)
KIM JA YOUNG (KR)
SHIN JUNG WON (KR)
Application Number:
PCT/KR2017/006235
Publication Date:
January 04, 2018
Filing Date:
June 15, 2017
Export Citation:
Assignee:
SK SILTRON CO LTD (KR)
International Classes:
H01L21/02; H01L21/324
Domestic Patent References:
WO2012089392A1 | 2012-07-05 |
Foreign References:
JP5578172B2 | 2014-08-27 | |||
JP2015006991A | 2015-01-15 | |||
JP2000195868A | 2000-07-14 | |||
JP4743010B2 | 2011-08-10 |
Attorney, Agent or Firm:
PARK, Young Bok et al. (KR)
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