Title:
WAFER MANUFACTURING METHOD AND WAFER
Document Type and Number:
WIPO Patent Application WO/2019/022381
Kind Code:
A1
Abstract:
A wafer manufacturing method, according to an embodiment, comprises the steps of: preparing a substrate comprising a dopant doped at a low concentration of 1E17 atoms/㎤ or less, having a specific resistance of 0.2 Ω·㎝ or more, and having no void defect; performing rapid thermal processing on the prepared substrate; removing a nitride film from the substrate on which the rapid thermal processing is performed; annealing the substrate; and forming an epitaxial layer on the annealed substrate.
Inventors:
LEE JAE HYEONG (KR)
LEE KI SANG (KR)
PARK HYUNG KOOK (KR)
NAM BYUNG WOOK (KR)
LEE KYU HYUNG (KR)
LEE KI SANG (KR)
PARK HYUNG KOOK (KR)
NAM BYUNG WOOK (KR)
LEE KYU HYUNG (KR)
Application Number:
PCT/KR2018/006887
Publication Date:
January 31, 2019
Filing Date:
June 19, 2018
Export Citation:
Assignee:
SK SILTRON CO LTD (KR)
International Classes:
H01L21/02; H01L21/304; H01L21/3105; H01L21/324
Foreign References:
| JP2009170940A | 2009-07-30 | |||
| KR100622622B1 | 2006-09-11 | |||
| KR20100127682A | 2010-12-06 | |||
| KR20100025728A | 2010-03-10 | |||
| KR20120093436A | 2012-08-22 | |||
| KR20040066173A | 2004-07-23 | |||
| KR20060123147A | 2006-12-01 |
Attorney, Agent or Firm:
LEE, Seung Chan (KR)
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