Title:
WAFER PLACEMENT STAGE
Document Type and Number:
WIPO Patent Application WO/2023/063016
Kind Code:
A1
Abstract:
A wafer placement stage 10 comprises: a ceramic base member 20; a cooling base member 30 of a metal matrix composite material; and a first metal bonding layer 41 bonding the ceramic base member 20 and the cooling base member 30. In the wafer placement stage 10, a gas supply path 38 is composed of a gas passageway 23 in the ceramic base member, a gas hole 41a in the first metal bonding layer, and a gas passageway 36 in the cooling base member. An insulating film 44 covers at least portions of the peripheral wall of the gas hole 41a in the first metal bonding layer and the peripheral wall of the gas passageway 36 in the cooling base member that are within the field of view when a wafer placement surface 21a is viewed from above. If the coefficient of linear thermal expansion of the ceramic material constituting the ceramic base member 20 at 40- 400℃ is X1[/K], and the coefficient of linear thermal expansion of the metal matrix composite material is X2[/K], the absolute value of the difference between X1 and X2 is less than or equal to 1.5×10-6/K.
Inventors:
KUNO TATSUYA (JP)
INOUE SEIYA (JP)
TAKEBAYASHI HIROSHI (JP)
INOUE SEIYA (JP)
TAKEBAYASHI HIROSHI (JP)
Application Number:
PCT/JP2022/034525
Publication Date:
April 20, 2023
Filing Date:
September 15, 2022
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
H01L21/683; H01L21/3065; H02N13/00
Domestic Patent References:
| WO2014141974A1 | 2014-09-18 |
Foreign References:
| JP2006156691A | 2006-06-15 | |||
| JP2018064055A | 2018-04-19 | |||
| JPH09148420A | 1997-06-06 | |||
| US20090002913A1 | 2009-01-01 | |||
| JPH0982683A | 1997-03-28 |
Attorney, Agent or Firm:
ITEC INTERNATIONAL PATENT FIRM (JP)
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